Electrical characteristics of GaAs nanowire-based MESFETs on flexible plastics

Changjoon Yoon; Gyoujin Cho; Sangsig Kim

doi:10.1109/TED.2011.2107518

Electrical characteristics of GaAs nanowire-based MESFETs on flexible plastics

Changjoon Yoon, Gyoujin Cho, Sangsig Kim

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the I_on/I_off ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 ⁷, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.

Original language	English
Article number	5732676
Pages (from-to)	1096-1101
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	4
DOIs	https://doi.org/10.1109/TED.2011.2107518
State	Published - Apr 2011
Externally published	Yes

Keywords

Flexible electronics
GaAs
metalsemiconductor field-effect transistors (MESFET)
nanowire (NW)

Access to Document

10.1109/TED.2011.2107518

Cite this

@article{de35d7292b6444f883e826c45322132b,

title = "Electrical characteristics of GaAs nanowire-based MESFETs on flexible plastics",

abstract = "GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the Ion/Ioff ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 7, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77\% and 1.02\%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.",

keywords = "Flexible electronics, GaAs, metalsemiconductor field-effect transistors (MESFET), nanowire (NW)",

author = "Changjoon Yoon and Gyoujin Cho and Sangsig Kim",

year = "2011",

month = apr,

doi = "10.1109/TED.2011.2107518",

language = "English",

volume = "58",

pages = "1096--1101",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Electrical characteristics of GaAs nanowire-based MESFETs on flexible plastics

AU - Yoon, Changjoon

AU - Cho, Gyoujin

AU - Kim, Sangsig

PY - 2011/4

Y1 - 2011/4

N2 - GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the Ion/Ioff ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 7, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.

AB - GaAs nanowire (NW)-based metalsemiconductor field-effect transistors (MESFETs) were constructed on flexible plastic substrates by a conventional topdown approach. The topdown approach utilized in this paper combines photolithography of high-quality GaAs bulk wafers with anisotropic chemical etching processes for preparation of GaAs NWs and photolithographic processes for formation of metal electrodes. For a representative GaAs NW-based MESFET, peak transconductance, the Ion/Ioff ratio, and the subthreshold slope are estimated to be approximately 19.7 μS, ∼10 7, and ∼100 mV/dec, respectively. The electrical characteristics of the GaAs NW-based MESFETs were maintained during 3000 times of bending cycles under maximal tensile strains of 0.77% and 1.02%. These results demonstrate the possibility of using these devices in high-speed and high-performance flexible electronics.

KW - Flexible electronics

KW - GaAs

KW - metalsemiconductor field-effect transistors (MESFET)

KW - nanowire (NW)

UR - https://www.scopus.com/pages/publications/79953094112

U2 - 10.1109/TED.2011.2107518

DO - 10.1109/TED.2011.2107518

M3 - Article

AN - SCOPUS:79953094112

SN - 0018-9383

VL - 58

SP - 1096

EP - 1101

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

M1 - 5732676

ER -

Electrical characteristics of GaAs nanowire-based MESFETs on flexible plastics

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this