Electrical characteristics of CeO2 buffer layer for a FRAM

Kyunghae Kim; Sukwon Choi; Sunghoon Kim; Yonghan Roh; Hoongjoo Lee; Donggeun Jung; Junsin Yi

Electrical characteristics of CeO₂ buffer layer for a FRAM

Kyunghae Kim, Sukwon Choi, Sunghoon Kim, Yonghan Roh, Hoongjoo Lee, Donggeun Jung, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The CeO₂ films were formed on Si(111) substrate by radio frequency-magnetron sputtering. The hysteresis was observed from the capacitance-voltage (C-V) characteristics of this sample. However, after the CeO₂-Si structure was annealed under O₂ ambient, the hysteresis almost disappeared due to the SiO₂ layer formation between CeO₂ and Si. It is interesting that a counter-clockwise hysteresis loop was observed in as-grown sample. On the other hand, the clockwise hysteresis loop was observed on the annealed sample. The annealed film showed the high capacitance at accumulation due to the large dielectric constant, and a higher breakdown voltage due to the thin SiO₂ layer. It was found that Poole-Frenkel emission and Schottky emission are the conduction mechanisms for annealed film. The CeO₂/SiO₂/Si structure was shown to be a legitimate candidate for FRAM device applications.

Original language	English
Pages	633-636
Number of pages	4
State	Published - 2000
Event	12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: 21 Jul 2000 → 2 Aug 2000

Conference

Conference	12th IEEE International Symposium on Applications of Ferroelectrics
Country/Territory	United States
City	Honolulu, HI
Period	21/07/00 → 2/08/00

Cite this

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title = "Electrical characteristics of CeO2 buffer layer for a FRAM",

abstract = "The CeO2 films were formed on Si(111) substrate by radio frequency-magnetron sputtering. The hysteresis was observed from the capacitance-voltage (C-V) characteristics of this sample. However, after the CeO2-Si structure was annealed under O2 ambient, the hysteresis almost disappeared due to the SiO2 layer formation between CeO2 and Si. It is interesting that a counter-clockwise hysteresis loop was observed in as-grown sample. On the other hand, the clockwise hysteresis loop was observed on the annealed sample. The annealed film showed the high capacitance at accumulation due to the large dielectric constant, and a higher breakdown voltage due to the thin SiO2 layer. It was found that Poole-Frenkel emission and Schottky emission are the conduction mechanisms for annealed film. The CeO2/SiO2/Si structure was shown to be a legitimate candidate for FRAM device applications.",

author = "Kyunghae Kim and Sukwon Choi and Sunghoon Kim and Yonghan Roh and Hoongjoo Lee and Donggeun Jung and Junsin Yi",

year = "2000",

language = "English",

pages = "633--636",

note = "12th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 21-07-2000 Through 02-08-2000",

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TY - CONF

T1 - Electrical characteristics of CeO2 buffer layer for a FRAM

AU - Kim, Kyunghae

AU - Choi, Sukwon

AU - Kim, Sunghoon

AU - Roh, Yonghan

AU - Lee, Hoongjoo

AU - Jung, Donggeun

AU - Yi, Junsin

PY - 2000

Y1 - 2000

N2 - The CeO2 films were formed on Si(111) substrate by radio frequency-magnetron sputtering. The hysteresis was observed from the capacitance-voltage (C-V) characteristics of this sample. However, after the CeO2-Si structure was annealed under O2 ambient, the hysteresis almost disappeared due to the SiO2 layer formation between CeO2 and Si. It is interesting that a counter-clockwise hysteresis loop was observed in as-grown sample. On the other hand, the clockwise hysteresis loop was observed on the annealed sample. The annealed film showed the high capacitance at accumulation due to the large dielectric constant, and a higher breakdown voltage due to the thin SiO2 layer. It was found that Poole-Frenkel emission and Schottky emission are the conduction mechanisms for annealed film. The CeO2/SiO2/Si structure was shown to be a legitimate candidate for FRAM device applications.

AB - The CeO2 films were formed on Si(111) substrate by radio frequency-magnetron sputtering. The hysteresis was observed from the capacitance-voltage (C-V) characteristics of this sample. However, after the CeO2-Si structure was annealed under O2 ambient, the hysteresis almost disappeared due to the SiO2 layer formation between CeO2 and Si. It is interesting that a counter-clockwise hysteresis loop was observed in as-grown sample. On the other hand, the clockwise hysteresis loop was observed on the annealed sample. The annealed film showed the high capacitance at accumulation due to the large dielectric constant, and a higher breakdown voltage due to the thin SiO2 layer. It was found that Poole-Frenkel emission and Schottky emission are the conduction mechanisms for annealed film. The CeO2/SiO2/Si structure was shown to be a legitimate candidate for FRAM device applications.

UR - https://www.scopus.com/pages/publications/0034473498

M3 - Paper

AN - SCOPUS:0034473498

SP - 633

EP - 636

T2 - 12th IEEE International Symposium on Applications of Ferroelectrics

Y2 - 21 July 2000 through 2 August 2000

ER -

Electrical characteristics of CeO₂ buffer layer for a FRAM

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