Electrical and structural properties of Ta-N thin film and Ta/Ta-N multilayer for embedded resistor

Suok Min Na; In Soo Park; Se Young Park; Geun Hee Jeong; Su Jeong Suh

doi:10.1016/j.tsf.2007.07.025

Electrical and structural properties of Ta-N thin film and Ta/Ta-N multilayer for embedded resistor

Suok Min Na, In Soo Park, Se Young Park, Geun Hee Jeong, Su Jeong Suh

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

37 Scopus citations

Abstract

Ta/Ta-N multilayer has been developed to control temperature coefficient of resistance (TCR) in a thin-film embedded resistor with the incorporation of Ta layer (+ TCR) inserted into Ta-N layers (- TCR). Electrical and structural properties of sputtered Ta, Ta-N and the multilayer films were investigated. The stable resistivity value of 0.0065 Ω·cm in β-Ta film was obtained, and phase change from fcc-TaN to orthorhombic Ta₃N₅ in Ta-N films was observed at nitrogen partial pressure of 22%. The multilayer of Si/Ta(60 nm)/Ta₃N₅(104 nm)/Ta(60 nm)/Ta₃N₅(104 nm) showed TCR value of - 284 ppm/K, where TCR of Ta was - 183 ppm/K and that of Ta₃N₅ was - 3193 ppm/K.

Original language	English
Pages (from-to)	5465-5469
Number of pages	5
Journal	Thin Solid Films
Volume	516
Issue number	16
DOIs	https://doi.org/10.1016/j.tsf.2007.07.025
State	Published - 30 Jun 2008

Keywords

Embedded resistor
Multilayer
Resistivity
Ta-N
Temperature coefficient of resistance (TCR)

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10.1016/j.tsf.2007.07.025

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title = "Electrical and structural properties of Ta-N thin film and Ta/Ta-N multilayer for embedded resistor",

abstract = "Ta/Ta-N multilayer has been developed to control temperature coefficient of resistance (TCR) in a thin-film embedded resistor with the incorporation of Ta layer (+ TCR) inserted into Ta-N layers (- TCR). Electrical and structural properties of sputtered Ta, Ta-N and the multilayer films were investigated. The stable resistivity value of 0.0065 Ω·cm in β-Ta film was obtained, and phase change from fcc-TaN to orthorhombic Ta3N5 in Ta-N films was observed at nitrogen partial pressure of 22\%. The multilayer of Si/Ta(60 nm)/Ta3N5(104 nm)/Ta(60 nm)/Ta3N5(104 nm) showed TCR value of - 284 ppm/K, where TCR of Ta was - 183 ppm/K and that of Ta3N5 was - 3193 ppm/K.",

keywords = "Embedded resistor, Multilayer, Resistivity, Ta-N, Temperature coefficient of resistance (TCR)",

author = "Na, \{Suok Min\} and Park, \{In Soo\} and Park, \{Se Young\} and Jeong, \{Geun Hee\} and Suh, \{Su Jeong\}",

year = "2008",

month = jun,

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doi = "10.1016/j.tsf.2007.07.025",

language = "English",

volume = "516",

pages = "5465--5469",

journal = "Thin Solid Films",

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TY - JOUR

T1 - Electrical and structural properties of Ta-N thin film and Ta/Ta-N multilayer for embedded resistor

AU - Na, Suok Min

AU - Park, In Soo

AU - Park, Se Young

AU - Jeong, Geun Hee

AU - Suh, Su Jeong

PY - 2008/6/30

Y1 - 2008/6/30

N2 - Ta/Ta-N multilayer has been developed to control temperature coefficient of resistance (TCR) in a thin-film embedded resistor with the incorporation of Ta layer (+ TCR) inserted into Ta-N layers (- TCR). Electrical and structural properties of sputtered Ta, Ta-N and the multilayer films were investigated. The stable resistivity value of 0.0065 Ω·cm in β-Ta film was obtained, and phase change from fcc-TaN to orthorhombic Ta3N5 in Ta-N films was observed at nitrogen partial pressure of 22%. The multilayer of Si/Ta(60 nm)/Ta3N5(104 nm)/Ta(60 nm)/Ta3N5(104 nm) showed TCR value of - 284 ppm/K, where TCR of Ta was - 183 ppm/K and that of Ta3N5 was - 3193 ppm/K.

AB - Ta/Ta-N multilayer has been developed to control temperature coefficient of resistance (TCR) in a thin-film embedded resistor with the incorporation of Ta layer (+ TCR) inserted into Ta-N layers (- TCR). Electrical and structural properties of sputtered Ta, Ta-N and the multilayer films were investigated. The stable resistivity value of 0.0065 Ω·cm in β-Ta film was obtained, and phase change from fcc-TaN to orthorhombic Ta3N5 in Ta-N films was observed at nitrogen partial pressure of 22%. The multilayer of Si/Ta(60 nm)/Ta3N5(104 nm)/Ta(60 nm)/Ta3N5(104 nm) showed TCR value of - 284 ppm/K, where TCR of Ta was - 183 ppm/K and that of Ta3N5 was - 3193 ppm/K.

KW - Embedded resistor

KW - Multilayer

KW - Resistivity

KW - Ta-N

KW - Temperature coefficient of resistance (TCR)

UR - https://www.scopus.com/pages/publications/43949115892

U2 - 10.1016/j.tsf.2007.07.025

DO - 10.1016/j.tsf.2007.07.025

M3 - Article

AN - SCOPUS:43949115892

SN - 0040-6090

VL - 516

SP - 5465

EP - 5469

JO - Thin Solid Films

JF - Thin Solid Films

IS - 16

ER -

Electrical and structural properties of Ta-N thin film and Ta/Ta-N multilayer for embedded resistor

Abstract

Keywords

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