Abstract
Boron doped CdS films were prepared by chemical bath deposition, which is a low-cost and large-area technique and appears to be well-suited for the manufacture of thin film solar cells, using boric acid (H3BO3) as dopant source, and their properties were investigated as a function of doping concentration. In addition, effects of the boron doping of the CdS films on the characteristics of CdS/CdTe solar cells were investigated. As the boron doping concentration increased, the resistivity of CdS films rapidly decreased and exhibited the lowest resistivity of 2 Ω cm at 0.01 of H3BO3/CdAc2 mole ratio. Boron doping into CdS films improved the optical transmittance in the visible region of light and increased the optical band gap. The photovoltaic characteristics of CdS/CdTe solar cells using boron doped CdS film as the window layer were improved due to the increase of the electrical conductivity and the optical band gap of CdS films.
| Original language | English |
|---|---|
| Pages (from-to) | 344-348 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 431-432 |
| DOIs | |
| State | Published - 1 May 2003 |
| Event | Proceedings of Symposium B - Strasbourg, France Duration: 18 Jun 2002 → 21 Jun 2002 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Boron
- Cadmium sulphide
- Cadmium telluride
- Solar cells
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