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Electrical and optical properties of boron doped CdS thin films prepared by chemical bath deposition

  • Korea National University of Transportation

Research output: Contribution to journalConference articlepeer-review

Abstract

Boron doped CdS films were prepared by chemical bath deposition, which is a low-cost and large-area technique and appears to be well-suited for the manufacture of thin film solar cells, using boric acid (H3BO3) as dopant source, and their properties were investigated as a function of doping concentration. In addition, effects of the boron doping of the CdS films on the characteristics of CdS/CdTe solar cells were investigated. As the boron doping concentration increased, the resistivity of CdS films rapidly decreased and exhibited the lowest resistivity of 2 Ω cm at 0.01 of H3BO3/CdAc2 mole ratio. Boron doping into CdS films improved the optical transmittance in the visible region of light and increased the optical band gap. The photovoltaic characteristics of CdS/CdTe solar cells using boron doped CdS film as the window layer were improved due to the increase of the electrical conductivity and the optical band gap of CdS films.

Original languageEnglish
Pages (from-to)344-348
Number of pages5
JournalThin Solid Films
Volume431-432
DOIs
StatePublished - 1 May 2003
EventProceedings of Symposium B - Strasbourg, France
Duration: 18 Jun 200221 Jun 2002

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Boron
  • Cadmium sulphide
  • Cadmium telluride
  • Solar cells

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