Electrical and microstructural properties of BaTiO3 thin films on p-Si substrates grown by metalorganic chemical vapor deposition

T. W. Kim; M. Jung; Y. S. Yoon; W. N. Kang; H. S. Shin; S. S. Yom; Jong Yong Lee

doi:10.1016/0038-1098(93)90140-I

Electrical and microstructural properties of BaTiO₃ thin films on p-Si substrates grown by metalorganic chemical vapor deposition

T. W. Kim
, M. Jung
, Y. S. Yoon
, W. N. Kang
, H. S. Shin
, S. S. Yom
, Jong Yong Lee

Kwangwoon University
Korea Institute of Science and Technology
Korea Advanced Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Metalorganic chemical vapor deposition of BaTiO₃ using Ba(tmhd)₂, Ti(OC₃H₇)₄, and N₂O via thermal pyrolysis was performed in order to produce BaTiO₃ insulator gates with a dielectric constant of high magnitude. Transmission electron microscopy results showed that the BaTiO₃ films has a polycrystalline. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a BaTiO₃ insulator gate. The dielectric constant determined from the capacitance-voltage measurements was as large as 1157. These results indicate that the BaTiO₃ layer may be used for high-density dynamic-memory applications.

Original language	English
Pages (from-to)	565-568
Number of pages	4
Journal	Solid State Communications
Volume	86
Issue number	9
DOIs	https://doi.org/10.1016/0038-1098(93)90140-I
State	Published - Jun 1993
Externally published	Yes

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@article{465dca8f6c4e428e85e426874a2e6458,

title = "Electrical and microstructural properties of BaTiO3 thin films on p-Si substrates grown by metalorganic chemical vapor deposition",

abstract = "Metalorganic chemical vapor deposition of BaTiO3 using Ba(tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis was performed in order to produce BaTiO3 insulator gates with a dielectric constant of high magnitude. Transmission electron microscopy results showed that the BaTiO3 films has a polycrystalline. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a BaTiO3 insulator gate. The dielectric constant determined from the capacitance-voltage measurements was as large as 1157. These results indicate that the BaTiO3 layer may be used for high-density dynamic-memory applications.",

author = "Kim, \{T. W.\} and M. Jung and Yoon, \{Y. S.\} and Kang, \{W. N.\} and Shin, \{H. S.\} and Yom, \{S. S.\} and Lee, \{Jong Yong\}",

year = "1993",

month = jun,

doi = "10.1016/0038-1098(93)90140-I",

language = "English",

volume = "86",

pages = "565--568",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd",

number = "9",

}

TY - JOUR

T1 - Electrical and microstructural properties of BaTiO3 thin films on p-Si substrates grown by metalorganic chemical vapor deposition

AU - Kim, T. W.

AU - Jung, M.

AU - Yoon, Y. S.

AU - Kang, W. N.

AU - Shin, H. S.

AU - Yom, S. S.

AU - Lee, Jong Yong

PY - 1993/6

Y1 - 1993/6

N2 - Metalorganic chemical vapor deposition of BaTiO3 using Ba(tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis was performed in order to produce BaTiO3 insulator gates with a dielectric constant of high magnitude. Transmission electron microscopy results showed that the BaTiO3 films has a polycrystalline. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a BaTiO3 insulator gate. The dielectric constant determined from the capacitance-voltage measurements was as large as 1157. These results indicate that the BaTiO3 layer may be used for high-density dynamic-memory applications.

AB - Metalorganic chemical vapor deposition of BaTiO3 using Ba(tmhd)2, Ti(OC3H7)4, and N2O via thermal pyrolysis was performed in order to produce BaTiO3 insulator gates with a dielectric constant of high magnitude. Transmission electron microscopy results showed that the BaTiO3 films has a polycrystalline. Room-temperature current-voltage and capacitance-voltage measurements clearly revealed metal-insulator-semiconductor behavior for the samples with a BaTiO3 insulator gate. The dielectric constant determined from the capacitance-voltage measurements was as large as 1157. These results indicate that the BaTiO3 layer may be used for high-density dynamic-memory applications.

UR - https://www.scopus.com/pages/publications/0027610107

U2 - 10.1016/0038-1098(93)90140-I

DO - 10.1016/0038-1098(93)90140-I

M3 - Article

AN - SCOPUS:0027610107

SN - 0038-1098

VL - 86

SP - 565

EP - 568

JO - Solid State Communications

JF - Solid State Communications

IS - 9

ER -

Electrical and microstructural properties of BaTiO₃ thin films on p-Si substrates grown by metalorganic chemical vapor deposition

Abstract

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