Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors

Wonjun Shin; Seongbin Hong; Yujeong Jeong; Gyuweon Jung; Jinwoo Park; Dongseok Kwon; Dongkyu Jang; Donghee Kim; Byung Gook Park; Jong Ho Lee

doi:10.1109/IEDM13553.2020.9371920

Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors

Wonjun Shin
, Seongbin Hong
, Yujeong Jeong
, Gyuweon Jung
, Jinwoo Park
, Dongseok Kwon
, Dongkyu Jang
, Donghee Kim
, Byung Gook Park
, Jong Ho Lee

Seoul National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Abstract

A novel charge storage engineering (CSE) using program/erase (P/E) operation for improving the sensing performance of FET-type gas sensors with floating-gate is proposed for the first time. The responses of the sensors to NO2 and H2S gases are significantly improved when the sensors are set at programmed (holes stored) and erased (electrons stored) states, respectively. The sensor, fabricated simply using 6 masks, has a 1/f noise (SID/ID2) that is ~103 times lower than that of resistor-type gas sensor fabricated on the same substrate, and is resistant to P/E F-N stress. The proposed CSE not only improves the response and limit of detection, but also allows selectivity for NO2 and H2S gases up to 5 and 6 times, respectively.

Original language	English
Title of host publication	2020 IEEE International Electron Devices Meeting, IEDM 2020
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	35.3.1-35.3.4
ISBN (Electronic)	9781728188881
DOIs	https://doi.org/10.1109/IEDM13553.2020.9371920
State	Published - 12 Dec 2020
Externally published	Yes
Event	66th Annual IEEE International Electron Devices Meeting, IEDM 2020 - Virtual, San Francisco, United States Duration: 12 Dec 2020 → 18 Dec 2020

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
Volume	2020-December
ISSN (Print)	0163-1918

Conference

Conference	66th Annual IEEE International Electron Devices Meeting, IEDM 2020
Country/Territory	United States
City	Virtual, San Francisco
Period	12/12/20 → 18/12/20

Access to Document

10.1109/IEDM13553.2020.9371920

Cite this

Shin, W., Hong, S., Jeong, Y., Jung, G., Park, J., Kwon, D., Jang, D., Kim, D., Park, B. G., & Lee, J. H. (2020). Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors. In 2020 IEEE International Electron Devices Meeting, IEDM 2020 (pp. 35.3.1-35.3.4). Article 9371920 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM13553.2020.9371920

Shin, Wonjun ; Hong, Seongbin ; Jeong, Yujeong et al. / Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors. 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. pp. 35.3.1-35.3.4 (Technical Digest - International Electron Devices Meeting, IEDM).

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title = "Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors",

abstract = "A novel charge storage engineering (CSE) using program/erase (P/E) operation for improving the sensing performance of FET-type gas sensors with floating-gate is proposed for the first time. The responses of the sensors to NO2 and H2S gases are significantly improved when the sensors are set at programmed (holes stored) and erased (electrons stored) states, respectively. The sensor, fabricated simply using 6 masks, has a 1/f noise (SID/ID2) that is \textasciitilde{}103 times lower than that of resistor-type gas sensor fabricated on the same substrate, and is resistant to P/E F-N stress. The proposed CSE not only improves the response and limit of detection, but also allows selectivity for NO2 and H2S gases up to 5 and 6 times, respectively.",

author = "Wonjun Shin and Seongbin Hong and Yujeong Jeong and Gyuweon Jung and Jinwoo Park and Dongseok Kwon and Dongkyu Jang and Donghee Kim and Park, \{Byung Gook\} and Lee, \{Jong Ho\}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 66th Annual IEEE International Electron Devices Meeting, IEDM 2020 ; Conference date: 12-12-2020 Through 18-12-2020",

year = "2020",

month = dec,

day = "12",

doi = "10.1109/IEDM13553.2020.9371920",

language = "English",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "35.3.1--35.3.4",

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}

Shin, W, Hong, S, Jeong, Y, Jung, G, Park, J, Kwon, D, Jang, D, Kim, D, Park, BG & Lee, JH 2020, Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors. in 2020 IEEE International Electron Devices Meeting, IEDM 2020., 9371920, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2020-December, Institute of Electrical and Electronics Engineers Inc., pp. 35.3.1-35.3.4, 66th Annual IEEE International Electron Devices Meeting, IEDM 2020, Virtual, San Francisco, United States, 12/12/20. https://doi.org/10.1109/IEDM13553.2020.9371920

Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors. / Shin, Wonjun; Hong, Seongbin; Jeong, Yujeong et al.
2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc., 2020. p. 35.3.1-35.3.4 9371920 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2020-December).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors

AU - Shin, Wonjun

AU - Hong, Seongbin

AU - Jeong, Yujeong

AU - Jung, Gyuweon

AU - Park, Jinwoo

AU - Kwon, Dongseok

AU - Jang, Dongkyu

AU - Kim, Donghee

AU - Park, Byung Gook

AU - Lee, Jong Ho

PY - 2020/12/12

Y1 - 2020/12/12

N2 - A novel charge storage engineering (CSE) using program/erase (P/E) operation for improving the sensing performance of FET-type gas sensors with floating-gate is proposed for the first time. The responses of the sensors to NO2 and H2S gases are significantly improved when the sensors are set at programmed (holes stored) and erased (electrons stored) states, respectively. The sensor, fabricated simply using 6 masks, has a 1/f noise (SID/ID2) that is ~103 times lower than that of resistor-type gas sensor fabricated on the same substrate, and is resistant to P/E F-N stress. The proposed CSE not only improves the response and limit of detection, but also allows selectivity for NO2 and H2S gases up to 5 and 6 times, respectively.

AB - A novel charge storage engineering (CSE) using program/erase (P/E) operation for improving the sensing performance of FET-type gas sensors with floating-gate is proposed for the first time. The responses of the sensors to NO2 and H2S gases are significantly improved when the sensors are set at programmed (holes stored) and erased (electrons stored) states, respectively. The sensor, fabricated simply using 6 masks, has a 1/f noise (SID/ID2) that is ~103 times lower than that of resistor-type gas sensor fabricated on the same substrate, and is resistant to P/E F-N stress. The proposed CSE not only improves the response and limit of detection, but also allows selectivity for NO2 and H2S gases up to 5 and 6 times, respectively.

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T2 - 66th Annual IEEE International Electron Devices Meeting, IEDM 2020

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ER -

Shin W, Hong S, Jeong Y, Jung G, Park J, Kwon D et al. Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors. In 2020 IEEE International Electron Devices Meeting, IEDM 2020. Institute of Electrical and Electronics Engineers Inc. 2020. p. 35.3.1-35.3.4. 9371920. (Technical Digest - International Electron Devices Meeting, IEDM). doi: 10.1109/IEDM13553.2020.9371920

Efficient improvement of sensing performance using charge storage engineering in low noise FET-type gas sensors

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