Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation

Bong Jin Kim; Hyung Jun Kim; Tae Sik Yoon; Yong Sang Kim; Hyun Ho Lee

doi:10.1149/1.3489530

Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation

Bong Jin Kim
, Hyung Jun Kim
, Tae Sik Yoon
, Yong Sang Kim
, Hyun Ho Lee

Myongji University

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The effects on electrical properties of solution-processed indium zinc tin oxide (IZTO) thin film transistors (TFTs) by nitrogen incorporation were investigated as a function of annealing temperature. The nitrogen incorporation was controlled by _NH4 OH addition into a precursor solution of zinc, indium, and tin chlorides. At 600°C annealing, the nitrogen-doped IZTO TFTs showed a field-effect mobility of 5.33 cm² /V s with an on/off ratio of 2.05× 10⁷. By the nitrogen incorporation, the annealing temperature could be lowered to 400°C for the fabrication of TFTs having a field-effect mobility of 0.303 cm² /V s. Physical and chemical analyses on films at various annealing temperatures were performed and compared, respectively.

Original language	English
Pages (from-to)	H419-H422
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	12
DOIs	https://doi.org/10.1149/1.3489530
State	Published - 2010
Externally published	Yes

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title = "Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation",

abstract = "The effects on electrical properties of solution-processed indium zinc tin oxide (IZTO) thin film transistors (TFTs) by nitrogen incorporation were investigated as a function of annealing temperature. The nitrogen incorporation was controlled by NH4 OH addition into a precursor solution of zinc, indium, and tin chlorides. At 600°C annealing, the nitrogen-doped IZTO TFTs showed a field-effect mobility of 5.33 cm2 /V s with an on/off ratio of 2.05× 107. By the nitrogen incorporation, the annealing temperature could be lowered to 400°C for the fabrication of TFTs having a field-effect mobility of 0.303 cm2 /V s. Physical and chemical analyses on films at various annealing temperatures were performed and compared, respectively.",

author = "Kim, \{Bong Jin\} and Kim, \{Hyung Jun\} and Yoon, \{Tae Sik\} and Kim, \{Yong Sang\} and Lee, \{Hyun Ho\}",

year = "2010",

doi = "10.1149/1.3489530",

language = "English",

volume = "13",

pages = "H419--H422",

journal = "Electrochemical and Solid-State Letters",

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T1 - Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation

AU - Kim, Bong Jin

AU - Kim, Hyung Jun

AU - Yoon, Tae Sik

AU - Kim, Yong Sang

AU - Lee, Hyun Ho

PY - 2010

Y1 - 2010

N2 - The effects on electrical properties of solution-processed indium zinc tin oxide (IZTO) thin film transistors (TFTs) by nitrogen incorporation were investigated as a function of annealing temperature. The nitrogen incorporation was controlled by NH4 OH addition into a precursor solution of zinc, indium, and tin chlorides. At 600°C annealing, the nitrogen-doped IZTO TFTs showed a field-effect mobility of 5.33 cm2 /V s with an on/off ratio of 2.05× 107. By the nitrogen incorporation, the annealing temperature could be lowered to 400°C for the fabrication of TFTs having a field-effect mobility of 0.303 cm2 /V s. Physical and chemical analyses on films at various annealing temperatures were performed and compared, respectively.

AB - The effects on electrical properties of solution-processed indium zinc tin oxide (IZTO) thin film transistors (TFTs) by nitrogen incorporation were investigated as a function of annealing temperature. The nitrogen incorporation was controlled by NH4 OH addition into a precursor solution of zinc, indium, and tin chlorides. At 600°C annealing, the nitrogen-doped IZTO TFTs showed a field-effect mobility of 5.33 cm2 /V s with an on/off ratio of 2.05× 107. By the nitrogen incorporation, the annealing temperature could be lowered to 400°C for the fabrication of TFTs having a field-effect mobility of 0.303 cm2 /V s. Physical and chemical analyses on films at various annealing temperatures were performed and compared, respectively.

UR - https://www.scopus.com/pages/publications/77958501520

U2 - 10.1149/1.3489530

DO - 10.1149/1.3489530

M3 - Article

AN - SCOPUS:77958501520

SN - 1099-0062

VL - 13

SP - H419-H422

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 12

ER -

Effects on annealing temperature for solution-processed IZTO TFTs by nitrogen incorporation

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