Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films

B. H. Park; E. J. Peterson; Q. X. Jia; J. Lee; X. Zeng; W. Si; X. X. Xi

doi:10.1063/1.1340863

Effects of very thin strain layers on dielectric properties of epitaxial Ba_0.6Sr_0.4TiO₃ films

B. H. Park
, E. J. Peterson
, Q. X. Jia
, J. Lee
, X. Zeng
, W. Si
, X. X. Xi

Department of Advanced Materials Science and Engineering

Los Alamos National Laboratory

Research output: Contribution to journal › Article › peer-review

180 Scopus citations

Abstract

We have epitaxially grown Ba_0.6Sr_0.4TiO₃ (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba_1-xSr_xTiO₃ (x =0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D = in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability.

Original language	English
Pages (from-to)	533-535
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	4
DOIs	https://doi.org/10.1063/1.1340863
State	Published - 22 Jan 2001

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@article{6dd823667c144840a029ec354cf34bc2,

title = "Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films",

abstract = "We have epitaxially grown Ba0.6Sr0.4TiO3 (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba1-xSrxTiO3 (x =0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D = in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability.",

author = "Park, \{B. H.\} and Peterson, \{E. J.\} and Jia, \{Q. X.\} and J. Lee and X. Zeng and W. Si and Xi, \{X. X.\}",

year = "2001",

month = jan,

day = "22",

doi = "10.1063/1.1340863",

language = "English",

volume = "78",

pages = "533--535",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Effects of very thin strain layers on dielectric properties of epitaxial Ba0.6Sr0.4TiO3 films

AU - Park, B. H.

AU - Peterson, E. J.

AU - Jia, Q. X.

AU - Lee, J.

AU - Zeng, X.

AU - Si, W.

AU - Xi, X. X.

PY - 2001/1/22

Y1 - 2001/1/22

N2 - We have epitaxially grown Ba0.6Sr0.4TiO3 (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba1-xSrxTiO3 (x =0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D = in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability.

AB - We have epitaxially grown Ba0.6Sr0.4TiO3 (BST-0.4) thin films on MgO(001) substrates. By inserting a very thin Ba1-xSrxTiO3 (x =0.1-0.7) interlayer between the MgO substrate and the main layer of BST-0.4, we are able to manipulate the degree of the stress in BST-0.4 films. We have controlled the stress states, i.e., the lattice distortion ratio (D = in-plane lattice constant/out-of-plane lattice constant) of the BST-0.4 films by varying the chemical composition of the interlayers. We have found that small variations of D value can result in significantly large changes of dielectric properties. A BST-0.4 film under small tensile stress, which has a D value of 1.0023, shows the largest dielectric permittivity and tunability.

UR - https://www.scopus.com/pages/publications/0040992761

U2 - 10.1063/1.1340863

DO - 10.1063/1.1340863

M3 - Article

AN - SCOPUS:0040992761

SN - 0003-6951

VL - 78

SP - 533

EP - 535

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Effects of very thin strain layers on dielectric properties of epitaxial Ba_0.6Sr_0.4TiO₃ films

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