Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors

Myeong Gu Yun; Cheol Hyoun Ahn; Ye Kyun Kim; Sung Woon Cho; Hyung Koun Cho; Hyoungsub Kim

doi:10.1016/j.jallcom.2016.02.166

Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors

Myeong Gu Yun, Cheol Hyoun Ahn, Ye Kyun Kim, Sung Woon Cho, Hyung Koun Cho, Hyoungsub Kim

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We examined vanadium-incorporated zinc tin oxide (VZTO) thin film transistors (TFTs) with various V contents and found that VZTO films easily become semi-insulators, even at small V contents (≥1.7 at%). We also fabricated VZTO/ZTO bi-layer TFTs with various VZTO top-layer thicknesses and investigated their electrical performance and stability. Regardless of the VZTO top-layer thickness, the VZTO/ZTO TFTs exhibited the transfer characteristics of a typical TFT because VZTO top-layers had semiconducting properties, unlike single VZTO films. As compared to the reference ZTO TFT, the stability of all the bi-layer TFTs under bias and/or illumination stress was significantly improved.

Original language	English
Pages (from-to)	449-456
Number of pages	8
Journal	Journal of Alloys and Compounds
Volume	672
DOIs	https://doi.org/10.1016/j.jallcom.2016.02.166
State	Published - 2016

Keywords

Bi-layer
Electrical property
Oxide semiconductor
Stability
Thin-film transistor
Top-layer thickness

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10.1016/j.jallcom.2016.02.166

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@article{1bdb10e7d0ef42e58898f649f9c0db0a,

title = "Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors",

abstract = "We examined vanadium-incorporated zinc tin oxide (VZTO) thin film transistors (TFTs) with various V contents and found that VZTO films easily become semi-insulators, even at small V contents (≥1.7 at\%). We also fabricated VZTO/ZTO bi-layer TFTs with various VZTO top-layer thicknesses and investigated their electrical performance and stability. Regardless of the VZTO top-layer thickness, the VZTO/ZTO TFTs exhibited the transfer characteristics of a typical TFT because VZTO top-layers had semiconducting properties, unlike single VZTO films. As compared to the reference ZTO TFT, the stability of all the bi-layer TFTs under bias and/or illumination stress was significantly improved.",

keywords = "Bi-layer, Electrical property, Oxide semiconductor, Stability, Thin-film transistor, Top-layer thickness",

author = "Yun, \{Myeong Gu\} and Ahn, \{Cheol Hyoun\} and Kim, \{Ye Kyun\} and Cho, \{Sung Woon\} and Cho, \{Hyung Koun\} and Hyoungsub Kim",

note = "Publisher Copyright: {\textcopyright} 2016 Elsevier B.V.",

year = "2016",

doi = "10.1016/j.jallcom.2016.02.166",

language = "English",

volume = "672",

pages = "449--456",

journal = "Journal of Alloys and Compounds",

issn = "0925-8388",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors

AU - Yun, Myeong Gu

AU - Ahn, Cheol Hyoun

AU - Kim, Ye Kyun

AU - Cho, Sung Woon

AU - Cho, Hyung Koun

AU - Kim, Hyoungsub

PY - 2016

Y1 - 2016

N2 - We examined vanadium-incorporated zinc tin oxide (VZTO) thin film transistors (TFTs) with various V contents and found that VZTO films easily become semi-insulators, even at small V contents (≥1.7 at%). We also fabricated VZTO/ZTO bi-layer TFTs with various VZTO top-layer thicknesses and investigated their electrical performance and stability. Regardless of the VZTO top-layer thickness, the VZTO/ZTO TFTs exhibited the transfer characteristics of a typical TFT because VZTO top-layers had semiconducting properties, unlike single VZTO films. As compared to the reference ZTO TFT, the stability of all the bi-layer TFTs under bias and/or illumination stress was significantly improved.

AB - We examined vanadium-incorporated zinc tin oxide (VZTO) thin film transistors (TFTs) with various V contents and found that VZTO films easily become semi-insulators, even at small V contents (≥1.7 at%). We also fabricated VZTO/ZTO bi-layer TFTs with various VZTO top-layer thicknesses and investigated their electrical performance and stability. Regardless of the VZTO top-layer thickness, the VZTO/ZTO TFTs exhibited the transfer characteristics of a typical TFT because VZTO top-layers had semiconducting properties, unlike single VZTO films. As compared to the reference ZTO TFT, the stability of all the bi-layer TFTs under bias and/or illumination stress was significantly improved.

KW - Bi-layer

KW - Electrical property

KW - Oxide semiconductor

KW - Stability

KW - Thin-film transistor

KW - Top-layer thickness

UR - https://www.scopus.com/pages/publications/85014025327

U2 - 10.1016/j.jallcom.2016.02.166

DO - 10.1016/j.jallcom.2016.02.166

M3 - Article

AN - SCOPUS:85014025327

SN - 0925-8388

VL - 672

SP - 449

EP - 456

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

ER -

Effects of top-layer thickness on electrical performance and stability in VZTO/ZTO bi-layer thin-film transistors

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Keywords

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