Effects of tin concentration on the electrical properties of room-temperature ion-beam-assisted-evaporation-deposited indium oxide thin films

Jeong Woon Bae; Sang Duk Park; Nam Gil Cho; Do Haing Lee; Geun Young Yeom

doi:10.1143/jjap.41.l999

Effects of tin concentration on the electrical properties of room-temperature ion-beam-assisted-evaporation-deposited indium oxide thin films

Jeong Woon Bae
, Sang Duk Park
, Nam Gil Cho
, Do Haing Lee
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Tin-doped indium oxide (ITO) thin films were deposited at room temperature by a dual-oxygen-ion-beam-assisted evaporator system and the effects of doped tin concentrations in the films on the electrical properties of the ITO films were investigated. Doped tin atoms in amorphous ITO films caused extra scattering and structural defects due to the inactivation of tin atoms in the films. Therefore, increasing the tin concentration decreased the conductivity. The lowest resistivity of indium oxide (IO) and ITO obtained was 3.6 × 10^-4 Ω-cm for IO and 4 × 10^-4 -7 × 10^-4 Ω-cm for 5-25 wt% SnO₂. The mobility and mean free path of these films were 20-63 cm²/V·s and 3.3-7.4 nm, respectively.

Original language	English
Pages (from-to)	L999-L1001
Journal	Japanese Journal of Applied Physics
Volume	41
Issue number	9 A/B
DOIs	https://doi.org/10.1143/jjap.41.l999
State	Published - 15 Sep 2002

Keywords

Amorphous
Defect
ITO
Room temperature
Scattering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1143/jjap.41.l999

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@article{6648ac3575ca4f0eaca712e6785f7753,

title = "Effects of tin concentration on the electrical properties of room-temperature ion-beam-assisted-evaporation-deposited indium oxide thin films",

abstract = "Tin-doped indium oxide (ITO) thin films were deposited at room temperature by a dual-oxygen-ion-beam-assisted evaporator system and the effects of doped tin concentrations in the films on the electrical properties of the ITO films were investigated. Doped tin atoms in amorphous ITO films caused extra scattering and structural defects due to the inactivation of tin atoms in the films. Therefore, increasing the tin concentration decreased the conductivity. The lowest resistivity of indium oxide (IO) and ITO obtained was 3.6 × 10-4 Ω-cm for IO and 4 × 10-4 -7 × 10-4 Ω-cm for 5-25 wt\% SnO2. The mobility and mean free path of these films were 20-63 cm2/V·s and 3.3-7.4 nm, respectively.",

keywords = "Amorphous, Defect, ITO, Room temperature, Scattering",

author = "Bae, \{Jeong Woon\} and Park, \{Sang Duk\} and Cho, \{Nam Gil\} and Lee, \{Do Haing\} and Yeom, \{Geun Young\}",

year = "2002",

month = sep,

day = "15",

doi = "10.1143/jjap.41.l999",

language = "English",

volume = "41",

pages = "L999--L1001",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "9 A/B",

}

TY - JOUR

T1 - Effects of tin concentration on the electrical properties of room-temperature ion-beam-assisted-evaporation-deposited indium oxide thin films

AU - Bae, Jeong Woon

AU - Park, Sang Duk

AU - Cho, Nam Gil

AU - Lee, Do Haing

AU - Yeom, Geun Young

PY - 2002/9/15

Y1 - 2002/9/15

N2 - Tin-doped indium oxide (ITO) thin films were deposited at room temperature by a dual-oxygen-ion-beam-assisted evaporator system and the effects of doped tin concentrations in the films on the electrical properties of the ITO films were investigated. Doped tin atoms in amorphous ITO films caused extra scattering and structural defects due to the inactivation of tin atoms in the films. Therefore, increasing the tin concentration decreased the conductivity. The lowest resistivity of indium oxide (IO) and ITO obtained was 3.6 × 10-4 Ω-cm for IO and 4 × 10-4 -7 × 10-4 Ω-cm for 5-25 wt% SnO2. The mobility and mean free path of these films were 20-63 cm2/V·s and 3.3-7.4 nm, respectively.

AB - Tin-doped indium oxide (ITO) thin films were deposited at room temperature by a dual-oxygen-ion-beam-assisted evaporator system and the effects of doped tin concentrations in the films on the electrical properties of the ITO films were investigated. Doped tin atoms in amorphous ITO films caused extra scattering and structural defects due to the inactivation of tin atoms in the films. Therefore, increasing the tin concentration decreased the conductivity. The lowest resistivity of indium oxide (IO) and ITO obtained was 3.6 × 10-4 Ω-cm for IO and 4 × 10-4 -7 × 10-4 Ω-cm for 5-25 wt% SnO2. The mobility and mean free path of these films were 20-63 cm2/V·s and 3.3-7.4 nm, respectively.

KW - Amorphous

KW - Defect

KW - ITO

KW - Room temperature

KW - Scattering

UR - https://www.scopus.com/pages/publications/0037107061

U2 - 10.1143/jjap.41.l999

DO - 10.1143/jjap.41.l999

M3 - Article

AN - SCOPUS:0037107061

SN - 0021-4922

VL - 41

SP - L999-L1001

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A/B

ER -

Effects of tin concentration on the electrical properties of room-temperature ion-beam-assisted-evaporation-deposited indium oxide thin films

Abstract

Keywords

UN SDGs

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