Abstract
CdTe films for solar cell application were prepared at various growth temperatures by a vacuum evaporation system having close spacing between the source and substrate. The CdTe thin films had a cubic structure highly oriented with the (111) direction perpendicular to the substrate surface, regardless of the growth temperature. The crystallites are of random shape and reach up to about 2 μm in size with increasing growth temperature. The higher growth temperature contributed to the reduction of dark resistivity from 6 × 107 Ω·cm at room temperature to 45.4 × 106 Ω·cm at 300°C. The photovoltaic properties of the CdS/CdTe solar cell were considerably improved with the increase in the growth temperature, which was caused by the increase of (111) texture and grain size in CdTe films.
| Original language | English |
|---|---|
| Pages (from-to) | 6741-6746 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 40 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 2001 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- Cadmium sulfide (CdS)
- Cadmium telluride (CdTe)
- CdS/CdTe solar cells
- Growth temperature
- Vacuum evaporation
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