Abstract
The effects of the gas ambience and the in-situ thermal annealing of ZnO buffer layers on the structural and optical properties of ZnO films subsequently grown by magnetron sputtering have been investigated. It was shown that the introduction of buffer layers grown in gas ambiences of mixed Ar/O 2 and the in-situ thermal treatment of the ZnO buffer layers improved the structural and optical properties. In addition, ZnO films on buffer layer thermal-annealed in N 2 gas ambience exhibited strong emission of the near band gap exciton with narrow linewidth on combining high-temperature growth of the ZnO.
| Original language | English |
|---|---|
| Pages (from-to) | S493-S496 |
| Journal | Journal of the Korean Physical Society |
| Volume | 47 |
| Issue number | SUPPL. 3 |
| State | Published - Nov 2005 |
| Externally published | Yes |
Keywords
- Buffer layer
- In-situ annealing
- Sputtering
- ZnO
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