Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Jae Hyeong Lee

doi:10.1007/s10832-008-9539-6

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

Jae Hyeong Lee

Kunsan National University

Research output: Contribution to journal › Article › peer-review

44 Scopus citations

Abstract

Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (T_s) exhibit a (411) preferred orientation but the films deposited at high T_s prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the T_s was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7×10^-4 Ω-cm) was obtained from ITO films deposited at 450 °C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.

Original language	English
Pages (from-to)	554-558
Number of pages	5
Journal	Journal of Electroceramics
Volume	23
Issue number	2-4
DOIs	https://doi.org/10.1007/s10832-008-9539-6
State	Published - Oct 2009
Externally published	Yes

Keywords

ITO film
Powder target
Sputtering
Substrate temperature

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10.1007/s10832-008-9539-6

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abstract = "Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (Ts) exhibit a (411) preferred orientation but the films deposited at high Ts prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the Ts was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7×10-4 Ω-cm) was obtained from ITO films deposited at 450 °C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.",

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author = "Lee, \{Jae Hyeong\}",

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T1 - Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

AU - Lee, Jae Hyeong

PY - 2009/10

Y1 - 2009/10

N2 - Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (Ts) exhibit a (411) preferred orientation but the films deposited at high Ts prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the Ts was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7×10-4 Ω-cm) was obtained from ITO films deposited at 450 °C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.

AB - Indium tin oxide (ITO) films have been prepared by r.f. magnetron sputtering using powder target. X-ray diffraction analysis indicates that the deposited films were polycrystalline and retained a cubic bixbite structure. The ITO films deposited at low substrate temperature (Ts) exhibit a (411) preferred orientation but the films deposited at high Ts prefer a (111) orientation. The substrate temperature was found to significantly affect the electrical properties. As the Ts was increased, the conductivity of ITO films was improved due to thermally induced crystallization. The lowest resistivity (8.7×10-4 Ω-cm) was obtained from ITO films deposited at 450 °C. However, optical properties of the films were somewhat deteriorated. The infrared (IR) reflectance of the film increases with increasing the substrate temperature.

KW - ITO film

KW - Powder target

KW - Sputtering

KW - Substrate temperature

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DO - 10.1007/s10832-008-9539-6

M3 - Article

AN - SCOPUS:73449148382

SN - 1385-3449

VL - 23

SP - 554

EP - 558

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 2-4

ER -

Effects of substrate temperature on electrical and optical properties ITO films deposited by r.f. magnetron sputtering

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Keywords

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