Effects of multipolar magnetic fields on the characteristics of plasma and photoresist etching in an internal linear inductively coupled plasma system

K. N. Kim; Y. J. Lee; S. J. Kyong; G. Y. Yeom

doi:10.1016/j.surfcoat.2003.08.017

Effects of multipolar magnetic fields on the characteristics of plasma and photoresist etching in an internal linear inductively coupled plasma system

K. N. Kim, Y. J. Lee, S. J. Kyong, G. Y. Yeom

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The development of a large-area plasma source with high-density plasmas is desired for a variety of plasma processes from microelectronics fabrication to flat panel display device fabrication. In this study, high density (approx. 10¹¹/cm³) and stable plasmas could be obtained by applying multipolar magnetic fields to a linear inductively coupled plasma source having the size of 1020×830 mm. The application of the magnetic fields decreased r.f. antenna voltage by half times and increased photoresist etch rates by three times. The plasma uniformity, which is considered as one of the most important factors in the large area plasma processing, could be maintained lower than 9%.

Original language	English
Pages (from-to)	752-757
Number of pages	6
Journal	Surface and Coatings Technology
Volume	177-178
DOIs	https://doi.org/10.1016/j.surfcoat.2003.08.017
State	Published - 30 Jan 2004

Keywords

Inductively coupled plasma
Multipolar magnetic fields
R.f. antenna voltage

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10.1016/j.surfcoat.2003.08.017

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title = "Effects of multipolar magnetic fields on the characteristics of plasma and photoresist etching in an internal linear inductively coupled plasma system",

abstract = "The development of a large-area plasma source with high-density plasmas is desired for a variety of plasma processes from microelectronics fabrication to flat panel display device fabrication. In this study, high density (approx. 1011/cm3) and stable plasmas could be obtained by applying multipolar magnetic fields to a linear inductively coupled plasma source having the size of 1020×830 mm. The application of the magnetic fields decreased r.f. antenna voltage by half times and increased photoresist etch rates by three times. The plasma uniformity, which is considered as one of the most important factors in the large area plasma processing, could be maintained lower than 9\%.",

keywords = "Inductively coupled plasma, Multipolar magnetic fields, R.f. antenna voltage",

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year = "2004",

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T1 - Effects of multipolar magnetic fields on the characteristics of plasma and photoresist etching in an internal linear inductively coupled plasma system

AU - Kim, K. N.

AU - Lee, Y. J.

AU - Kyong, S. J.

AU - Yeom, G. Y.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - The development of a large-area plasma source with high-density plasmas is desired for a variety of plasma processes from microelectronics fabrication to flat panel display device fabrication. In this study, high density (approx. 1011/cm3) and stable plasmas could be obtained by applying multipolar magnetic fields to a linear inductively coupled plasma source having the size of 1020×830 mm. The application of the magnetic fields decreased r.f. antenna voltage by half times and increased photoresist etch rates by three times. The plasma uniformity, which is considered as one of the most important factors in the large area plasma processing, could be maintained lower than 9%.

AB - The development of a large-area plasma source with high-density plasmas is desired for a variety of plasma processes from microelectronics fabrication to flat panel display device fabrication. In this study, high density (approx. 1011/cm3) and stable plasmas could be obtained by applying multipolar magnetic fields to a linear inductively coupled plasma source having the size of 1020×830 mm. The application of the magnetic fields decreased r.f. antenna voltage by half times and increased photoresist etch rates by three times. The plasma uniformity, which is considered as one of the most important factors in the large area plasma processing, could be maintained lower than 9%.

KW - Inductively coupled plasma

KW - Multipolar magnetic fields

KW - R.f. antenna voltage

UR - https://www.scopus.com/pages/publications/1342268110

U2 - 10.1016/j.surfcoat.2003.08.017

DO - 10.1016/j.surfcoat.2003.08.017

M3 - Article

AN - SCOPUS:1342268110

SN - 0257-8972

VL - 177-178

SP - 752

EP - 757

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

ER -

Effects of multipolar magnetic fields on the characteristics of plasma and photoresist etching in an internal linear inductively coupled plasma system

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Keywords

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