Effects of ion damage on the surface of ITO films during plasma treatment

Hyunjung Shin, Chanhyung Kim, Changdeuck Bae, Jang Sik Lee, Jaegab Lee, Sunghan Kim

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

During a surface treatment using CF 4 /O 2 gas plasma, energetic ions affected the defect structures on the top surface of ITO thin films. C-AFM and local I-V measurements showed the formation of the depleted layer after a plasma treatment with a bias of 20 W; XPS showed the creation of new defect structures. Donor concentration in the damaged top surface of the ITO films was found to be decreased. Sn-based neutral defect complexes and reduced oxygen, which could trap the electrons, have been proposed to be formed. This can also explain the increase of the work function of ITO.

Original languageEnglish
Pages (from-to)8928-8932
Number of pages5
JournalApplied Surface Science
Volume253
Issue number22
DOIs
StatePublished - 15 Sep 2007
Externally publishedYes

Keywords

  • Conducting atomic force microscopy
  • Ion damage
  • ITO

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