Abstract
During a surface treatment using CF 4 /O 2 gas plasma, energetic ions affected the defect structures on the top surface of ITO thin films. C-AFM and local I-V measurements showed the formation of the depleted layer after a plasma treatment with a bias of 20 W; XPS showed the creation of new defect structures. Donor concentration in the damaged top surface of the ITO films was found to be decreased. Sn-based neutral defect complexes and reduced oxygen, which could trap the electrons, have been proposed to be formed. This can also explain the increase of the work function of ITO.
| Original language | English |
|---|---|
| Pages (from-to) | 8928-8932 |
| Number of pages | 5 |
| Journal | Applied Surface Science |
| Volume | 253 |
| Issue number | 22 |
| DOIs | |
| State | Published - 15 Sep 2007 |
| Externally published | Yes |
Keywords
- Conducting atomic force microscopy
- Ion damage
- ITO