Effects of interfacial oxygen-deficient layer on resistance switching in Cr-doped SrTiO3 thin films

Bach Thang Phan; Jaichan Lee

doi:10.1063/1.3039072

Effects of interfacial oxygen-deficient layer on resistance switching in Cr-doped SrTiO₃ thin films

Bach Thang Phan
, Jaichan Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We investigated resistance switching in Cr-doped SrTiO₃ thin films with an oxygen-deficient layer at the interface. Impedance spectroscopy showed the Maxwell-Wagner relaxation due to the high-resistance oxygen-deficient layer in addition to a bulk layer of lower resistance. The high oxygen-deficient layer significantly limits the carrier injection, thus resulting in the disappearance of resistance switching. The resistance switching was recovered by reducing the oxygen vacancy concentration at the top interface by cooling or postannealing at high oxygen ambient pressures.

Original language	English
Article number	222906
Journal	Applied Physics Letters
Volume	93
Issue number	22
DOIs	https://doi.org/10.1063/1.3039072
State	Published - 2008

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title = "Effects of interfacial oxygen-deficient layer on resistance switching in Cr-doped SrTiO3 thin films",

abstract = "We investigated resistance switching in Cr-doped SrTiO3 thin films with an oxygen-deficient layer at the interface. Impedance spectroscopy showed the Maxwell-Wagner relaxation due to the high-resistance oxygen-deficient layer in addition to a bulk layer of lower resistance. The high oxygen-deficient layer significantly limits the carrier injection, thus resulting in the disappearance of resistance switching. The resistance switching was recovered by reducing the oxygen vacancy concentration at the top interface by cooling or postannealing at high oxygen ambient pressures.",

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AU - Phan, Bach Thang

AU - Lee, Jaichan

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N2 - We investigated resistance switching in Cr-doped SrTiO3 thin films with an oxygen-deficient layer at the interface. Impedance spectroscopy showed the Maxwell-Wagner relaxation due to the high-resistance oxygen-deficient layer in addition to a bulk layer of lower resistance. The high oxygen-deficient layer significantly limits the carrier injection, thus resulting in the disappearance of resistance switching. The resistance switching was recovered by reducing the oxygen vacancy concentration at the top interface by cooling or postannealing at high oxygen ambient pressures.

AB - We investigated resistance switching in Cr-doped SrTiO3 thin films with an oxygen-deficient layer at the interface. Impedance spectroscopy showed the Maxwell-Wagner relaxation due to the high-resistance oxygen-deficient layer in addition to a bulk layer of lower resistance. The high oxygen-deficient layer significantly limits the carrier injection, thus resulting in the disappearance of resistance switching. The resistance switching was recovered by reducing the oxygen vacancy concentration at the top interface by cooling or postannealing at high oxygen ambient pressures.

UR - https://www.scopus.com/pages/publications/57349116068

U2 - 10.1063/1.3039072

DO - 10.1063/1.3039072

M3 - Article

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SN - 0003-6951

VL - 93

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

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ER -

Effects of interfacial oxygen-deficient layer on resistance switching in Cr-doped SrTiO₃ thin films

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