Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film

Seok Joo Wang; Hyung Ho Park; Geun Young Yeom

doi:10.1143/jjap.39.7007

Effects of H₂ addition in magnetized inductively coupled C₂F₆ plasma etching of silica aerogel film

Seok Joo Wang
, Hyung Ho Park
, Geun Young Yeom

Department of Advanced Materials Science and Engineering

Yonsei University

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Effect of H₂ addition to C₂F₆ plasma etching of SiO₂ aerogel film was examined for low-k dielectric application. In this experiment, H₂ plasma in itself was responsible for pore blocking and bond breaking of the SiO₂ aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO₂ aerogel was severely dropped at 20% of H₂ addition. According to the increase in H₂ addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO₂ aerogel. Surface microstructure of SiO₂ aerogel was so influenced with the increasing H₂ addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H₂ plasma.

Original language	English
Pages (from-to)	7007-7010
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	39
Issue number	12 B
DOIs	https://doi.org/10.1143/jjap.39.7007
State	Published - Dec 2000

Keywords

CF
Etching
H
Low-k dielectric
Plasma
Residue
SiO aerogel

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title = "Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film",

abstract = "Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50\%, etch rate of SiO2 aerogel was severely dropped at 20\% of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.",

keywords = "CF, Etching, H, Low-k dielectric, Plasma, Residue, SiO aerogel",

author = "Wang, \{Seok Joo\} and Park, \{Hyung Ho\} and Yeom, \{Geun Young\}",

year = "2000",

month = dec,

doi = "10.1143/jjap.39.7007",

language = "English",

volume = "39",

pages = "7007--7010",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "12 B",

}

TY - JOUR

T1 - Effects of H2 addition in magnetized inductively coupled C2F6 plasma etching of silica aerogel film

AU - Wang, Seok Joo

AU - Park, Hyung Ho

AU - Yeom, Geun Young

PY - 2000/12

Y1 - 2000/12

N2 - Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO2 aerogel was severely dropped at 20% of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.

AB - Effect of H2 addition to C2F6 plasma etching of SiO2 aerogel film was examined for low-k dielectric application. In this experiment, H2 plasma in itself was responsible for pore blocking and bond breaking of the SiO2 aerogel. With increasing hydrogen from 0 to 50%, etch rate of SiO2 aerogel was severely dropped at 20% of H2 addition. According to the increase in H2 addition, transition from fluorine-rich residue to carbon-rich one was gradually happened in SiO2 aerogel. Surface microstructure of SiO2 aerogel was so influenced with the increasing H2 addition that they transformed to be planar by the interaction between residue/network and ion bombardment and the condensation reaction of surface chemicals with H2 plasma.

KW - CF

KW - Etching

KW - H

KW - Low-k dielectric

KW - Plasma

KW - Residue

KW - SiO aerogel

UR - https://www.scopus.com/pages/publications/0034430580

U2 - 10.1143/jjap.39.7007

DO - 10.1143/jjap.39.7007

M3 - Article

AN - SCOPUS:0034430580

SN - 0021-4922

VL - 39

SP - 7007

EP - 7010

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 12 B

ER -

Effects of H₂ addition in magnetized inductively coupled C₂F₆ plasma etching of silica aerogel film

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