Effects of deposition termination on Cu2ZnSnSe4device characteristics

I. L. Repins; J. V. Li; A. Kanevce; C. L. Perkins; K. X. Steirer; J. Pankow; G. Teeter; D. Kuciauskas; C. Beall; C. Dehart; J. Carapella; B. Bob; J. S. Park; S. H. Wei

doi:10.1016/j.tsf.2014.09.028

Effects of deposition termination on Cu₂ZnSnSe₄device characteristics

I. L. Repins
, J. V. Li
, A. Kanevce
, C. L. Perkins
, K. X. Steirer
, J. Pankow
, G. Teeter
, D. Kuciauskas
, C. Beall
, C. Dehart
, J. Carapella
, B. Bob
, J. S. Park
, S. H. Wei

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Co-evaporated Cu₂ZnSnSe₄(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

Original language	English
Pages (from-to)	184-187
Number of pages	4
Journal	Thin Solid Films
Volume	582
DOIs	https://doi.org/10.1016/j.tsf.2014.09.028
State	Published - 1 May 2015
Externally published	Yes

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Copper zinc tin selenide
Copper zinc tin sulfide
Hole barrier
Kesterite
Solar cell
Surface
Thin films
Voltage

Access to Document

10.1016/j.tsf.2014.09.028

Cite this

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title = "Effects of deposition termination on Cu2ZnSnSe4device characteristics",

abstract = "Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.",

keywords = "Copper zinc tin selenide, Copper zinc tin sulfide, Hole barrier, Kesterite, Solar cell, Surface, Thin films, Voltage",

author = "Repins, \{I. L.\} and Li, \{J. V.\} and A. Kanevce and Perkins, \{C. L.\} and Steirer, \{K. X.\} and J. Pankow and G. Teeter and D. Kuciauskas and C. Beall and C. Dehart and J. Carapella and B. Bob and Park, \{J. S.\} and Wei, \{S. H.\}",

year = "2015",

month = may,

day = "1",

doi = "10.1016/j.tsf.2014.09.028",

language = "English",

volume = "582",

pages = "184--187",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Effects of deposition termination on Cu2ZnSnSe4device characteristics

AU - Repins, I. L.

AU - Li, J. V.

AU - Kanevce, A.

AU - Perkins, C. L.

AU - Steirer, K. X.

AU - Pankow, J.

AU - Teeter, G.

AU - Kuciauskas, D.

AU - Beall, C.

AU - Dehart, C.

AU - Carapella, J.

AU - Bob, B.

AU - Park, J. S.

AU - Wei, S. H.

PY - 2015/5/1

Y1 - 2015/5/1

N2 - Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

AB - Co-evaporated Cu2ZnSnSe4(CZTSe) is used to examine sensitivities to the device performance that originate from variations in Zn content very near the surface. While integral Zn content of the film is held approximately constant, the surface composition is manipulated via changes to the Zn flux at the end of the deposition. Surface composition, device performance, and open-circuit voltage extrapolated to zero temperature are measured as a function of deposition termination. Origins of the apparent reduction in surface recombination with increasing Zn are discussed.

KW - Copper zinc tin selenide

KW - Copper zinc tin sulfide

KW - Hole barrier

KW - Kesterite

KW - Solar cell

KW - Surface

KW - Thin films

KW - Voltage

UR - https://www.scopus.com/pages/publications/84926513375

U2 - 10.1016/j.tsf.2014.09.028

DO - 10.1016/j.tsf.2014.09.028

M3 - Article

AN - SCOPUS:84926513375

SN - 0040-6090

VL - 582

SP - 184

EP - 187

JO - Thin Solid Films

JF - Thin Solid Films

ER -