Effects of deposition parameters on the crystallinity of CeO2 thin films deposited on Si(100) substrates by r.f.-magnetron sputtering

Leejun Kim; Jinmo Kim; Donggeun Jung; Chong Yun Park; Cheol Woong Yang; Yonghan Roh

doi:10.1016/S0040-6090(99)01087-1

Effects of deposition parameters on the crystallinity of CeO₂ thin films deposited on Si(100) substrates by r.f.-magnetron sputtering

Leejun Kim, Jinmo Kim, Donggeun Jung, Chong Yun Park, Cheol Woong Yang, Yonghan Roh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

Deposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO₂ thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO₂ (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO₂(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO₂(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO₂ thin film had a polycrystalline structure. Annealing at 950°C in O₂ atmosphere for 30 min increased and sharpened the CeO₂(200) peak.

Original language	English
Pages (from-to)	154-158
Number of pages	5
Journal	Thin Solid Films
Volume	360
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(99)01087-1
State	Published - 1 Feb 2000

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title = "Effects of deposition parameters on the crystallinity of CeO2 thin films deposited on Si(100) substrates by r.f.-magnetron sputtering",

abstract = "Deposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO2 thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO2(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO2(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 thin film had a polycrystalline structure. Annealing at 950°C in O2 atmosphere for 30 min increased and sharpened the CeO2(200) peak.",

author = "Leejun Kim and Jinmo Kim and Donggeun Jung and Park, \{Chong Yun\} and Yang, \{Cheol Woong\} and Yonghan Roh",

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T1 - Effects of deposition parameters on the crystallinity of CeO2 thin films deposited on Si(100) substrates by r.f.-magnetron sputtering

AU - Kim, Leejun

AU - Kim, Jinmo

AU - Jung, Donggeun

AU - Park, Chong Yun

AU - Yang, Cheol Woong

AU - Roh, Yonghan

PY - 2000/2/1

Y1 - 2000/2/1

N2 - Deposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO2 thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO2(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO2(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 thin film had a polycrystalline structure. Annealing at 950°C in O2 atmosphere for 30 min increased and sharpened the CeO2(200) peak.

AB - Deposition temperature, r.f.-power and seed layer deposition time were important parameters effecting the crystallinity of CeO2 thin films deposited by r.f.-magnetron sputtering on Si(100) substrates. The CeO2 (200) peak was notable for a deposition temperature above 600°C. With decreased r.f.-power and thus lower deposition rate, the intensity of the CeO2(200) peak increased. When the seed layer deposition time was less than 20 s, the CeO2(200) peak dominated. Transmission electron microscopy (TEM) diffraction revealed that the deposited CeO2 thin film had a polycrystalline structure. Annealing at 950°C in O2 atmosphere for 30 min increased and sharpened the CeO2(200) peak.

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DO - 10.1016/S0040-6090(99)01087-1

M3 - Article

AN - SCOPUS:0034140432

SN - 0040-6090

VL - 360

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ER -

Effects of deposition parameters on the crystallinity of CeO₂ thin films deposited on Si(100) substrates by r.f.-magnetron sputtering

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