Effects of Channel Length Scaling on the Signal-To-Noise Ratio in FET-Type Gas Sensor with Horizontal Floating-Gate

Wonjun Shin; Seongbin Hong; Yujeong Jeong; Gyuweon Jung; Jinwoo Park; Donghee Kim; Byung Gook Park; Jong Ho Lee

doi:10.1109/LED.2022.3145374

Effects of Channel Length Scaling on the Signal-To-Noise Ratio in FET-Type Gas Sensor with Horizontal Floating-Gate

Wonjun Shin
, Seongbin Hong
, Yujeong Jeong
, Gyuweon Jung
, Jinwoo Park
, Donghee Kim
, Byung Gook Park
, Jong Ho Lee

Seoul National University

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

We investigate the channel length ( {L} ) scaling effects on the signal-To-noise ratio (SNR) of the field-effect-Transistor (FET)-Type gas sensor with a horizontal floating-gate. A sensing layer, 15 nm of indium-gallium-zinc-oxide thin film, is deposited by the radio frequency sputtering method. Nitrogen dioxide is used as a target gas. The low-frequency noise characteristics of the FET-Type gas sensor are explained by the carrier number fluctuation model with correlated mobility fluctuation. The SNR is proportional to the square root of the {L} of the FET transducer. The result provides important guidelines in designing the sensor platform in FET-Type gas sensors.

Original language	English
Pages (from-to)	442-445
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	3
DOIs	https://doi.org/10.1109/LED.2022.3145374
State	Published - 1 Mar 2022
Externally published	Yes

Keywords

Gas sensors
IGZO
low-frequency noise (LFN)
NOâÂ Â
signal-To-noise ratio (SNR)

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10.1109/LED.2022.3145374

Cite this

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title = "Effects of Channel Length Scaling on the Signal-To-Noise Ratio in FET-Type Gas Sensor with Horizontal Floating-Gate",

abstract = "We investigate the channel length ( \{L\} ) scaling effects on the signal-To-noise ratio (SNR) of the field-effect-Transistor (FET)-Type gas sensor with a horizontal floating-gate. A sensing layer, 15 nm of indium-gallium-zinc-oxide thin film, is deposited by the radio frequency sputtering method. Nitrogen dioxide is used as a target gas. The low-frequency noise characteristics of the FET-Type gas sensor are explained by the carrier number fluctuation model with correlated mobility fluctuation. The SNR is proportional to the square root of the \{L\} of the FET transducer. The result provides important guidelines in designing the sensor platform in FET-Type gas sensors.",

keywords = "Gas sensors, IGZO, low-frequency noise (LFN), NO{\^a}{\^A} {\^A}, signal-To-noise ratio (SNR)",

author = "Wonjun Shin and Seongbin Hong and Yujeong Jeong and Gyuweon Jung and Jinwoo Park and Donghee Kim and Park, \{Byung Gook\} and Lee, \{Jong Ho\}",

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doi = "10.1109/LED.2022.3145374",

language = "English",

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AU - Shin, Wonjun

AU - Hong, Seongbin

AU - Jeong, Yujeong

AU - Jung, Gyuweon

AU - Park, Jinwoo

AU - Kim, Donghee

AU - Park, Byung Gook

AU - Lee, Jong Ho

PY - 2022/3/1

Y1 - 2022/3/1

N2 - We investigate the channel length ( {L} ) scaling effects on the signal-To-noise ratio (SNR) of the field-effect-Transistor (FET)-Type gas sensor with a horizontal floating-gate. A sensing layer, 15 nm of indium-gallium-zinc-oxide thin film, is deposited by the radio frequency sputtering method. Nitrogen dioxide is used as a target gas. The low-frequency noise characteristics of the FET-Type gas sensor are explained by the carrier number fluctuation model with correlated mobility fluctuation. The SNR is proportional to the square root of the {L} of the FET transducer. The result provides important guidelines in designing the sensor platform in FET-Type gas sensors.

AB - We investigate the channel length ( {L} ) scaling effects on the signal-To-noise ratio (SNR) of the field-effect-Transistor (FET)-Type gas sensor with a horizontal floating-gate. A sensing layer, 15 nm of indium-gallium-zinc-oxide thin film, is deposited by the radio frequency sputtering method. Nitrogen dioxide is used as a target gas. The low-frequency noise characteristics of the FET-Type gas sensor are explained by the carrier number fluctuation model with correlated mobility fluctuation. The SNR is proportional to the square root of the {L} of the FET transducer. The result provides important guidelines in designing the sensor platform in FET-Type gas sensors.

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KW - IGZO

KW - low-frequency noise (LFN)

KW - NOâÂ Â

KW - signal-To-noise ratio (SNR)

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JF - IEEE Electron Device Letters

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ER -

Effects of Channel Length Scaling on the Signal-To-Noise Ratio in FET-Type Gas Sensor with Horizontal Floating-Gate

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Keywords

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