Effects of carrier concentration, indium content, and crystallinity on the electrical properties of indium-tin-zinc-oxide thin-film transistors

Kyungsoo Jang; Jayapal Raja; Youn Jung Lee; Doyoung Kim; Junsin Yi

doi:10.1109/LED.2013.2272084

Effects of carrier concentration, indium content, and crystallinity on the electrical properties of indium-tin-zinc-oxide thin-film transistors

Kyungsoo Jang, Jayapal Raja, Youn Jung Lee, Doyoung Kim, Junsin Yi

Department of Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We report the effects of carrier concentration (N_CH), indium (In) content, and crystallinity (X_c) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest N_CH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility a (μFE) of 37.2 cm ²/V·s, high ON/OFF current ratio (I_ON/I _OFF) of ∼1×10⁷, and low subthreshold swing (S.S) of 0.93. With increasing N_CH, In content, and X_c, μ FE, I_ON/I_OFF, and S.S surprisingly degraded to 14.4 cm²/V·s, ∼4 × 10 4, and 4.01, respectively. Our high ITZO TFTs with μFE of 37.2 cm²/V·s, obtained thorough control of the N_CH, In content, and X_c, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.

Original language	English
Article number	6558796
Pages (from-to)	1151-1153
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	34
Issue number	9
DOIs	https://doi.org/10.1109/LED.2013.2272084
State	Published - 2013

Keywords

Carrier concentration
crystallinity
In content
Indium-Tin-Zinc-oxide (ITZO)
next-generation displays
thin-film transistor (TFT)

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10.1109/LED.2013.2272084

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title = "Effects of carrier concentration, indium content, and crystallinity on the electrical properties of indium-tin-zinc-oxide thin-film transistors",

abstract = "We report the effects of carrier concentration (NCH), indium (In) content, and crystallinity (Xc) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest NCH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility a (μFE) of 37.2 cm 2/V·s, high ON/OFF current ratio (ION/I OFF) of ∼1×107, and low subthreshold swing (S.S) of 0.93. With increasing NCH, In content, and Xc, μ FE, ION/IOFF, and S.S surprisingly degraded to 14.4 cm2/V·s, ∼4 × 10 4, and 4.01, respectively. Our high ITZO TFTs with μFE of 37.2 cm2/V·s, obtained thorough control of the NCH, In content, and Xc, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.",

keywords = "Carrier concentration, crystallinity, In content, Indium-Tin-Zinc-oxide (ITZO), next-generation displays, thin-film transistor (TFT)",

author = "Kyungsoo Jang and Jayapal Raja and Lee, \{Youn Jung\} and Doyoung Kim and Junsin Yi",

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doi = "10.1109/LED.2013.2272084",

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AU - Jang, Kyungsoo

AU - Raja, Jayapal

AU - Lee, Youn Jung

AU - Kim, Doyoung

AU - Yi, Junsin

PY - 2013

Y1 - 2013

N2 - We report the effects of carrier concentration (NCH), indium (In) content, and crystallinity (Xc) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest NCH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility a (μFE) of 37.2 cm 2/V·s, high ON/OFF current ratio (ION/I OFF) of ∼1×107, and low subthreshold swing (S.S) of 0.93. With increasing NCH, In content, and Xc, μ FE, ION/IOFF, and S.S surprisingly degraded to 14.4 cm2/V·s, ∼4 × 10 4, and 4.01, respectively. Our high ITZO TFTs with μFE of 37.2 cm2/V·s, obtained thorough control of the NCH, In content, and Xc, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.

AB - We report the effects of carrier concentration (NCH), indium (In) content, and crystallinity (Xc) on the electrical properties of indium-tin-zinc-oxide (ITZO) thin-film transistors (TFTs). The ITZO TFT with the lowest NCH, In content, and amorphous phase at the optimized oxygen flow rate has high field-effect mobility a (μFE) of 37.2 cm 2/V·s, high ON/OFF current ratio (ION/I OFF) of ∼1×107, and low subthreshold swing (S.S) of 0.93. With increasing NCH, In content, and Xc, μ FE, ION/IOFF, and S.S surprisingly degraded to 14.4 cm2/V·s, ∼4 × 10 4, and 4.01, respectively. Our high ITZO TFTs with μFE of 37.2 cm2/V·s, obtained thorough control of the NCH, In content, and Xc, was suitable for application to next generation ultrahigh resolution displays as well as high frame rate displays.

KW - Carrier concentration

KW - crystallinity

KW - In content

KW - Indium-Tin-Zinc-oxide (ITZO)

KW - next-generation displays

KW - thin-film transistor (TFT)

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U2 - 10.1109/LED.2013.2272084

DO - 10.1109/LED.2013.2272084

M3 - Article

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SN - 0741-3106

VL - 34

SP - 1151

EP - 1153

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 6558796

ER -

Effects of carrier concentration, indium content, and crystallinity on the electrical properties of indium-tin-zinc-oxide thin-film transistors

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