Effects of BCl3 addition on Ar/Cl2 gas in inductively coupled plasmas for lead zirconate titanate etching

Tae Hyun An; Joon Yong Park; Geun Young Yeom; Eui Goo Chang; Chang Il Kim

doi:10.1116/1.582356

Effects of BCl₃ addition on Ar/Cl₂ gas in inductively coupled plasmas for lead zirconate titanate etching

Tae Hyun An, Joon Yong Park, Geun Young Yeom, Eui Goo Chang, Chang Il Kim

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Conference article › peer-review

19 Scopus citations

Abstract

Reactive ion etching (RIE) of lead zirconate titanate (PZT) thin film was investigated using an Ar(20)/Cl₂/BCl₃ gas mixture in an inductively coupled plasma (ICP). The PZT etch rate of 2450 angstroms/min was obtained at an inductive power of 500 W, dc-bias voltage of -300 V, total pressure of 20 mTorr, and substrate temperature of 80 °C. X ray photoelectron spectroscopy analysis for film composition was utilized. Results showed that PbO in PZT film was readily broken and transformed to Pb relative to ZrO₂ and TiO₂.

Original language	English
Pages (from-to)	1373-1376
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	18
Issue number	4 I
DOIs	https://doi.org/10.1116/1.582356
State	Published - Jul 2000
Event	46th National Symposium of the American Vacuum Society - Seatlle, WA, USA Duration: 25 Oct 1999 → 29 Oct 1999

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@article{32853f3ad75c426f810e8985237684b2,

title = "Effects of BCl3 addition on Ar/Cl2 gas in inductively coupled plasmas for lead zirconate titanate etching",

abstract = "Reactive ion etching (RIE) of lead zirconate titanate (PZT) thin film was investigated using an Ar(20)/Cl2/BCl3 gas mixture in an inductively coupled plasma (ICP). The PZT etch rate of 2450 angstroms/min was obtained at an inductive power of 500 W, dc-bias voltage of -300 V, total pressure of 20 mTorr, and substrate temperature of 80 °C. X ray photoelectron spectroscopy analysis for film composition was utilized. Results showed that PbO in PZT film was readily broken and transformed to Pb relative to ZrO2 and TiO2.",

author = "An, \{Tae Hyun\} and Park, \{Joon Yong\} and Yeom, \{Geun Young\} and Chang, \{Eui Goo\} and Kim, \{Chang Il\}",

year = "2000",

month = jul,

doi = "10.1116/1.582356",

language = "English",

volume = "18",

pages = "1373--1376",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4 I",

note = "46th National Symposium of the American Vacuum Society ; Conference date: 25-10-1999 Through 29-10-1999",

}

TY - JOUR

T1 - Effects of BCl3 addition on Ar/Cl2 gas in inductively coupled plasmas for lead zirconate titanate etching

AU - An, Tae Hyun

AU - Park, Joon Yong

AU - Yeom, Geun Young

AU - Chang, Eui Goo

AU - Kim, Chang Il

PY - 2000/7

Y1 - 2000/7

N2 - Reactive ion etching (RIE) of lead zirconate titanate (PZT) thin film was investigated using an Ar(20)/Cl2/BCl3 gas mixture in an inductively coupled plasma (ICP). The PZT etch rate of 2450 angstroms/min was obtained at an inductive power of 500 W, dc-bias voltage of -300 V, total pressure of 20 mTorr, and substrate temperature of 80 °C. X ray photoelectron spectroscopy analysis for film composition was utilized. Results showed that PbO in PZT film was readily broken and transformed to Pb relative to ZrO2 and TiO2.

AB - Reactive ion etching (RIE) of lead zirconate titanate (PZT) thin film was investigated using an Ar(20)/Cl2/BCl3 gas mixture in an inductively coupled plasma (ICP). The PZT etch rate of 2450 angstroms/min was obtained at an inductive power of 500 W, dc-bias voltage of -300 V, total pressure of 20 mTorr, and substrate temperature of 80 °C. X ray photoelectron spectroscopy analysis for film composition was utilized. Results showed that PbO in PZT film was readily broken and transformed to Pb relative to ZrO2 and TiO2.

UR - https://www.scopus.com/pages/publications/0034229161

U2 - 10.1116/1.582356

DO - 10.1116/1.582356

M3 - Conference article

AN - SCOPUS:0034229161

SN - 0734-2101

VL - 18

SP - 1373

EP - 1376

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4 I

T2 - 46th National Symposium of the American Vacuum Society

Y2 - 25 October 1999 through 29 October 1999

ER -

Effects of BCl₃ addition on Ar/Cl₂ gas in inductively coupled plasmas for lead zirconate titanate etching

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