Effects of annealing temperature on the characteristics of HfSi xOy/HfO2 high-k gate oxides

H. D. Kim; Y. Roh; Y. Lee; J. E. Lee; D. Jung; N. E. Lee

doi:10.1116/1.1743119

Effects of annealing temperature on the characteristics of HfSi _xO_y/HfO₂ high-k gate oxides

H. D. Kim, Y. Roh, Y. Lee, J. E. Lee, D. Jung, N. E. Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The effects of annealing temperature on the physical and electrical properties of the HfSi_xO_Y/HfO₂ thin film for high-k gates oxides in a metal-oxide-semiconductor device were investigated. The excellent electrical characteristics of the HfSi_xO _Y/HfO₂ stack layer was obtained. It was found that the electrical characteristics except J-V were degraded due to the formation of the interfacial SiO_x layer. It was suggested that annealing temperature must be carefully controlled to obtain the excellent electrical properties of HfO₂/HfSi_xO_y high-k gate oxides.

Original language	English
Pages (from-to)	1347-1350
Number of pages	4
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	22
Issue number	4
DOIs	https://doi.org/10.1116/1.1743119
State	Published - Jul 2004

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@article{0f7bf7bde3354c8f8185abc210f0193d,

title = "Effects of annealing temperature on the characteristics of HfSi xOy/HfO2 high-k gate oxides",

abstract = "The effects of annealing temperature on the physical and electrical properties of the HfSixOY/HfO2 thin film for high-k gates oxides in a metal-oxide-semiconductor device were investigated. The excellent electrical characteristics of the HfSixO Y/HfO2 stack layer was obtained. It was found that the electrical characteristics except J-V were degraded due to the formation of the interfacial SiOx layer. It was suggested that annealing temperature must be carefully controlled to obtain the excellent electrical properties of HfO2/HfSixOy high-k gate oxides.",

author = "Kim, \{H. D.\} and Y. Roh and Y. Lee and Lee, \{J. E.\} and D. Jung and Lee, \{N. E.\}",

year = "2004",

month = jul,

doi = "10.1116/1.1743119",

language = "English",

volume = "22",

pages = "1347--1350",

journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",

issn = "0734-2101",

publisher = "AVS Science and Technology Society",

number = "4",

}

TY - JOUR

T1 - Effects of annealing temperature on the characteristics of HfSi xOy/HfO2 high-k gate oxides

AU - Kim, H. D.

AU - Roh, Y.

AU - Lee, Y.

AU - Lee, J. E.

AU - Jung, D.

AU - Lee, N. E.

PY - 2004/7

Y1 - 2004/7

N2 - The effects of annealing temperature on the physical and electrical properties of the HfSixOY/HfO2 thin film for high-k gates oxides in a metal-oxide-semiconductor device were investigated. The excellent electrical characteristics of the HfSixO Y/HfO2 stack layer was obtained. It was found that the electrical characteristics except J-V were degraded due to the formation of the interfacial SiOx layer. It was suggested that annealing temperature must be carefully controlled to obtain the excellent electrical properties of HfO2/HfSixOy high-k gate oxides.

AB - The effects of annealing temperature on the physical and electrical properties of the HfSixOY/HfO2 thin film for high-k gates oxides in a metal-oxide-semiconductor device were investigated. The excellent electrical characteristics of the HfSixO Y/HfO2 stack layer was obtained. It was found that the electrical characteristics except J-V were degraded due to the formation of the interfacial SiOx layer. It was suggested that annealing temperature must be carefully controlled to obtain the excellent electrical properties of HfO2/HfSixOy high-k gate oxides.

UR - https://www.scopus.com/pages/publications/4344584106

U2 - 10.1116/1.1743119

DO - 10.1116/1.1743119

M3 - Article

AN - SCOPUS:4344584106

SN - 0734-2101

VL - 22

SP - 1347

EP - 1350

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

IS - 4

ER -

Effects of annealing temperature on the characteristics of HfSi _xO_y/HfO₂ high-k gate oxides

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