@inproceedings{d6980c79a01f40b0a917be1cc69495b3,
title = "Effects of annealing gas on electrical properties of La2O3 gate dielectrics",
abstract = "Solution-processed lanthanum oxide(La2O3) films were formed on the Si substrates under N2 and O2 ambience annealing conditions. Compared to N2 conditions, flat-band voltage shifted to positive gate bias direction and leakage current was less for O2 annealed devices resulted from the reduction of the oxygen-related trap sites in the film.",
keywords = "High-k dielectric, Interface trap density, La2O3, MOS-Cs, Oxygen annealing",
author = "Minjun Song and Byoungdeog Choi",
note = "Publisher Copyright: {\textcopyright} 2019 ITE and SID.; 26th International Display Workshops, IDW 2019 ; Conference date: 27-11-2019 Through 29-11-2019",
year = "2019",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "721--723",
booktitle = "26th International Display Workshops, IDW 2019",
address = "Japan",
}