Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy

C. K. Chia; J. R. Dong; D. Z. Chi; A. Sridhara; A. S.W. Wong; M. Suryana; G. K. Dalapati; S. J. Chua; S. J. Lee

doi:10.1063/1.2908042

Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy

C. K. Chia, J. R. Dong, D. Z. Chi, A. Sridhara, A. S.W. Wong, M. Suryana, G. K. Dalapati, S. J. Chua, S. J. Lee

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56 Scopus citations

Abstract

GaAsAlAsGe (100) samples grown at 650 °C with AlAs interfacial layer thickness of 0, 10, 20, and 30 nm were characterized using transmission electron microscopy, secondary ion mass spectrometry (SIMS), and photoluminescence (PL) techniques. SIMS results indicate that the presence of an ultrathin AlAs interfacial layer at the GaAsGe interface has dramatically blocked the cross diffusion of Ge, Ga, and As atoms, attributed to the higher Al-As bonding energy. The optical quality of the GaAs epitaxy with a thin AlAs interfacial layer is found to be improved with complete elimination of PL originated from Ge-based complexes, in corroboration with SIMS results.

Original language	English
Article number	141905
Journal	Applied Physics Letters
Volume	92
Issue number	14
DOIs	https://doi.org/10.1063/1.2908042
State	Published - 2008
Externally published	Yes

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title = "Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy",

abstract = "GaAsAlAsGe (100) samples grown at 650 °C with AlAs interfacial layer thickness of 0, 10, 20, and 30 nm were characterized using transmission electron microscopy, secondary ion mass spectrometry (SIMS), and photoluminescence (PL) techniques. SIMS results indicate that the presence of an ultrathin AlAs interfacial layer at the GaAsGe interface has dramatically blocked the cross diffusion of Ge, Ga, and As atoms, attributed to the higher Al-As bonding energy. The optical quality of the GaAs epitaxy with a thin AlAs interfacial layer is found to be improved with complete elimination of PL originated from Ge-based complexes, in corroboration with SIMS results.",

author = "Chia, \{C. K.\} and Dong, \{J. R.\} and Chi, \{D. Z.\} and A. Sridhara and Wong, \{A. S.W.\} and M. Suryana and Dalapati, \{G. K.\} and Chua, \{S. J.\} and Lee, \{S. J.\}",

year = "2008",

doi = "10.1063/1.2908042",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy

AU - Chia, C. K.

AU - Dong, J. R.

AU - Chi, D. Z.

AU - Sridhara, A.

AU - Wong, A. S.W.

AU - Suryana, M.

AU - Dalapati, G. K.

AU - Chua, S. J.

AU - Lee, S. J.

PY - 2008

Y1 - 2008

N2 - GaAsAlAsGe (100) samples grown at 650 °C with AlAs interfacial layer thickness of 0, 10, 20, and 30 nm were characterized using transmission electron microscopy, secondary ion mass spectrometry (SIMS), and photoluminescence (PL) techniques. SIMS results indicate that the presence of an ultrathin AlAs interfacial layer at the GaAsGe interface has dramatically blocked the cross diffusion of Ge, Ga, and As atoms, attributed to the higher Al-As bonding energy. The optical quality of the GaAs epitaxy with a thin AlAs interfacial layer is found to be improved with complete elimination of PL originated from Ge-based complexes, in corroboration with SIMS results.

AB - GaAsAlAsGe (100) samples grown at 650 °C with AlAs interfacial layer thickness of 0, 10, 20, and 30 nm were characterized using transmission electron microscopy, secondary ion mass spectrometry (SIMS), and photoluminescence (PL) techniques. SIMS results indicate that the presence of an ultrathin AlAs interfacial layer at the GaAsGe interface has dramatically blocked the cross diffusion of Ge, Ga, and As atoms, attributed to the higher Al-As bonding energy. The optical quality of the GaAs epitaxy with a thin AlAs interfacial layer is found to be improved with complete elimination of PL originated from Ge-based complexes, in corroboration with SIMS results.

UR - https://www.scopus.com/pages/publications/42149122765

U2 - 10.1063/1.2908042

DO - 10.1063/1.2908042

M3 - Article

AN - SCOPUS:42149122765

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 141905

ER -

Effects of AlAs interfacial layer on material and optical properties of GaAsGe (100) epitaxy

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