Abstract
A simple method for controlling the effective work function of a transparent indium-tin-oxide (ITO) film deposited using a radio-frequency (RF) sputter system was developed. The effective surface work functions of the ITO films were measured using in-situ ultraviolet photoelectron spectroscopy during step-by-step deposition of a sub-nanometer thick aluminum (Al) layer on the surface. The changes of the transparency and the sheet resistance of the ITO films were measured before and after deposition of a sub-nanometer thick Al layer on the surface. The measurements revealed that the effective surface work function of the transparent ITO electrode could be controlled from 3.83 to 4.69 eV by the deposition of an Al layer of less than 0.3 nm in thickness without changes in the transparency or the film sheet resistance.
| Original language | English |
|---|---|
| Pages (from-to) | L2655-L2657 |
| Journal | Journal of the Korean Physical Society |
| Volume | 59 |
| Issue number | 4 |
| DOIs | |
| State | Published - 14 Oct 2011 |
| Externally published | Yes |
Keywords
- ITO
- Photoelectron spectroscopy
- Transparent electrode
- Work function
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