Effect of Thermoelectric Leg Thickness in a Planar Thin Film TEC Device on Different Substrates

Cheol Kim; Sangkug Park; Jeonglim Yoon; Hai shan Shen; Min Woo Jeong; Hoojeong Lee; Youngcheol Joo; Young Chang Joo

doi:10.1007/s13391-019-00167-2

Effect of Thermoelectric Leg Thickness in a Planar Thin Film TEC Device on Different Substrates

Cheol Kim
, Sangkug Park
, Jeonglim Yoon
, Hai shan Shen
, Min Woo Jeong
, Hoojeong Lee
, Youngcheol Joo
, Young Chang Joo

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Abstract: Recently, mobile application processors (APs) have suffered from thermal issues such as local hot spot generation. Several approaches for chip cooling, such as dynamic thermal management, and heat pipe cooling, have been attempted so far, but, these solutions cannot completely eliminate increasing thermal issues. Therefore, in this study, we fabricated a planar type of thin film thermoelectric cooler (TEC) as an active cooling device for a mobile AP chip. We studied the effect of thickness on a planar thin film TEC device related to Joule heating and demonstrated the Peltier cooling effect on polyimide (PI) and Si substrates. The optimal thicknesses of n-type Bi₂Te₃ and p-type Sb₂Te₃ films were evaluated by ANSYS^® simulation, and are 5.05 μm and 5.45 μm, respectively. It was shown that heat moves to the TE leg on the PI substrate, while the Si substrate serves as a heat sink according to the IR thermography analysis. The optimal thickness of the TE showed a temperature difference between the cold junction and hot junction up to 1.3 °C. Graphical Abstract: [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	686-692
Number of pages	7
Journal	Electronic Materials Letters
Volume	15
Issue number	6
DOIs	https://doi.org/10.1007/s13391-019-00167-2
State	Published - 1 Nov 2019

Keywords

ANSYS simulation
Hot spot
Joule heating
Planar type
Polyimide
Silicon
TEC
Thermoelectric cooler

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10.1007/s13391-019-00167-2

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@article{5842e371a9e94e96939f41f060e8ee04,

title = "Effect of Thermoelectric Leg Thickness in a Planar Thin Film TEC Device on Different Substrates",

abstract = "Abstract: Recently, mobile application processors (APs) have suffered from thermal issues such as local hot spot generation. Several approaches for chip cooling, such as dynamic thermal management, and heat pipe cooling, have been attempted so far, but, these solutions cannot completely eliminate increasing thermal issues. Therefore, in this study, we fabricated a planar type of thin film thermoelectric cooler (TEC) as an active cooling device for a mobile AP chip. We studied the effect of thickness on a planar thin film TEC device related to Joule heating and demonstrated the Peltier cooling effect on polyimide (PI) and Si substrates. The optimal thicknesses of n-type Bi2Te3 and p-type Sb2Te3 films were evaluated by ANSYS{\textregistered} simulation, and are 5.05 μm and 5.45 μm, respectively. It was shown that heat moves to the TE leg on the PI substrate, while the Si substrate serves as a heat sink according to the IR thermography analysis. The optimal thickness of the TE showed a temperature difference between the cold junction and hot junction up to 1.3 °C. Graphical Abstract: [Figure not available: see fulltext.]",

keywords = "ANSYS simulation, Hot spot, Joule heating, Planar type, Polyimide, Silicon, TEC, Thermoelectric cooler",

author = "Cheol Kim and Sangkug Park and Jeonglim Yoon and Shen, \{Hai shan\} and Jeong, \{Min Woo\} and Hoojeong Lee and Youngcheol Joo and Joo, \{Young Chang\}",

note = "Publisher Copyright: {\textcopyright} 2019, The Korean Institute of Metals and Materials.",

year = "2019",

month = nov,

day = "1",

doi = "10.1007/s13391-019-00167-2",

language = "English",

volume = "15",

pages = "686--692",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "6",

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TY - JOUR

T1 - Effect of Thermoelectric Leg Thickness in a Planar Thin Film TEC Device on Different Substrates

AU - Kim, Cheol

AU - Park, Sangkug

AU - Yoon, Jeonglim

AU - Shen, Hai shan

AU - Jeong, Min Woo

AU - Lee, Hoojeong

AU - Joo, Youngcheol

AU - Joo, Young Chang

PY - 2019/11/1

Y1 - 2019/11/1

N2 - Abstract: Recently, mobile application processors (APs) have suffered from thermal issues such as local hot spot generation. Several approaches for chip cooling, such as dynamic thermal management, and heat pipe cooling, have been attempted so far, but, these solutions cannot completely eliminate increasing thermal issues. Therefore, in this study, we fabricated a planar type of thin film thermoelectric cooler (TEC) as an active cooling device for a mobile AP chip. We studied the effect of thickness on a planar thin film TEC device related to Joule heating and demonstrated the Peltier cooling effect on polyimide (PI) and Si substrates. The optimal thicknesses of n-type Bi2Te3 and p-type Sb2Te3 films were evaluated by ANSYS® simulation, and are 5.05 μm and 5.45 μm, respectively. It was shown that heat moves to the TE leg on the PI substrate, while the Si substrate serves as a heat sink according to the IR thermography analysis. The optimal thickness of the TE showed a temperature difference between the cold junction and hot junction up to 1.3 °C. Graphical Abstract: [Figure not available: see fulltext.]

AB - Abstract: Recently, mobile application processors (APs) have suffered from thermal issues such as local hot spot generation. Several approaches for chip cooling, such as dynamic thermal management, and heat pipe cooling, have been attempted so far, but, these solutions cannot completely eliminate increasing thermal issues. Therefore, in this study, we fabricated a planar type of thin film thermoelectric cooler (TEC) as an active cooling device for a mobile AP chip. We studied the effect of thickness on a planar thin film TEC device related to Joule heating and demonstrated the Peltier cooling effect on polyimide (PI) and Si substrates. The optimal thicknesses of n-type Bi2Te3 and p-type Sb2Te3 films were evaluated by ANSYS® simulation, and are 5.05 μm and 5.45 μm, respectively. It was shown that heat moves to the TE leg on the PI substrate, while the Si substrate serves as a heat sink according to the IR thermography analysis. The optimal thickness of the TE showed a temperature difference between the cold junction and hot junction up to 1.3 °C. Graphical Abstract: [Figure not available: see fulltext.]

KW - ANSYS simulation

KW - Hot spot

KW - Joule heating

KW - Planar type

KW - Polyimide

KW - Silicon

KW - TEC

KW - Thermoelectric cooler

UR - https://www.scopus.com/pages/publications/85074279409

U2 - 10.1007/s13391-019-00167-2

DO - 10.1007/s13391-019-00167-2

M3 - Article

AN - SCOPUS:85074279409

SN - 1738-8090

VL - 15

SP - 686

EP - 692

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 6

ER -

Effect of Thermoelectric Leg Thickness in a Planar Thin Film TEC Device on Different Substrates

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