Effect of target-substrate distance on the properties of hetero facing target sputtered al-ga-zn-o films

Hyun Su Shin; Ki Won Seo; Ju Hyun Lee; Han Ki Kim

doi:10.7567/JJAP.52.075502

Effect of target-substrate distance on the properties of hetero facing target sputtered al-ga-zn-o films

Hyun Su Shin
, Ki Won Seo
, Ju Hyun Lee
, Han Ki Kim

Kyung Hee University

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

We investigated the effects of facing target-substrate distance (TSD) on the electrical, optical, structural and morphological properties of Al-Ga- Zn-O (AGZO) films grown by linear facing target sputtering (LFTS) at room temperature to optimize the TSD. Although the optimal TSD for depositing an AGZO film was 3 cm, based on figure of merit values, a longer TSD prevents plasma damage of the AGZO films. The AGZO film sputtered under optimized conditions had a sheet resistance of 132 Ohm/square and an optical transmittance of 87.2%. Based on the electrical, optical, structural, and surface properties of AGZO films grown at different TSDs, we suggest a possible mechanism to explain the effects TSD on properties of hetero-sputtered AGZO films prepared by LFTS process.

Original language	English
Article number	075502
Journal	Japanese Journal of Applied Physics
Volume	52
Issue number	7 PART 1
DOIs	https://doi.org/10.7567/JJAP.52.075502
State	Published - Jan 2013
Externally published	Yes

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title = "Effect of target-substrate distance on the properties of hetero facing target sputtered al-ga-zn-o films",

abstract = "We investigated the effects of facing target-substrate distance (TSD) on the electrical, optical, structural and morphological properties of Al-Ga- Zn-O (AGZO) films grown by linear facing target sputtering (LFTS) at room temperature to optimize the TSD. Although the optimal TSD for depositing an AGZO film was 3 cm, based on figure of merit values, a longer TSD prevents plasma damage of the AGZO films. The AGZO film sputtered under optimized conditions had a sheet resistance of 132 Ohm/square and an optical transmittance of 87.2\%. Based on the electrical, optical, structural, and surface properties of AGZO films grown at different TSDs, we suggest a possible mechanism to explain the effects TSD on properties of hetero-sputtered AGZO films prepared by LFTS process.",

author = "Shin, \{Hyun Su\} and Seo, \{Ki Won\} and Lee, \{Ju Hyun\} and Kim, \{Han Ki\}",

year = "2013",

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language = "English",

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journal = "Japanese Journal of Applied Physics",

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T1 - Effect of target-substrate distance on the properties of hetero facing target sputtered al-ga-zn-o films

AU - Shin, Hyun Su

AU - Seo, Ki Won

AU - Lee, Ju Hyun

AU - Kim, Han Ki

PY - 2013/1

Y1 - 2013/1

N2 - We investigated the effects of facing target-substrate distance (TSD) on the electrical, optical, structural and morphological properties of Al-Ga- Zn-O (AGZO) films grown by linear facing target sputtering (LFTS) at room temperature to optimize the TSD. Although the optimal TSD for depositing an AGZO film was 3 cm, based on figure of merit values, a longer TSD prevents plasma damage of the AGZO films. The AGZO film sputtered under optimized conditions had a sheet resistance of 132 Ohm/square and an optical transmittance of 87.2%. Based on the electrical, optical, structural, and surface properties of AGZO films grown at different TSDs, we suggest a possible mechanism to explain the effects TSD on properties of hetero-sputtered AGZO films prepared by LFTS process.

AB - We investigated the effects of facing target-substrate distance (TSD) on the electrical, optical, structural and morphological properties of Al-Ga- Zn-O (AGZO) films grown by linear facing target sputtering (LFTS) at room temperature to optimize the TSD. Although the optimal TSD for depositing an AGZO film was 3 cm, based on figure of merit values, a longer TSD prevents plasma damage of the AGZO films. The AGZO film sputtered under optimized conditions had a sheet resistance of 132 Ohm/square and an optical transmittance of 87.2%. Based on the electrical, optical, structural, and surface properties of AGZO films grown at different TSDs, we suggest a possible mechanism to explain the effects TSD on properties of hetero-sputtered AGZO films prepared by LFTS process.

UR - https://www.scopus.com/pages/publications/84880989212

U2 - 10.7567/JJAP.52.075502

DO - 10.7567/JJAP.52.075502

M3 - Article

AN - SCOPUS:84880989212

SN - 0021-4922

VL - 52

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7 PART 1

M1 - 075502

ER -

Effect of target-substrate distance on the properties of hetero facing target sputtered al-ga-zn-o films

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