Effect of surface roughness on plasma oxidation behavior of Al layer and tunneling magnetoresistance

Dong Min Jeon; Jin Woo Park; Seong Yong Yoon; Du Hyun Lee; Dae Ho Yoon; Su Jeong Suh

Effect of surface roughness on plasma oxidation behavior of Al layer and tunneling magnetoresistance

Dong Min Jeon
, Jin Woo Park
, Seong Yong Yoon
, Du Hyun Lee
, Dae Ho Yoon
, Su Jeong Suh

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

Abstract

The effect of surface roughness on plasma oxidation behavior of aluminum layer and on tunneling magnetoresistance (TMR) was discussed. The TMR and a junction resistance were evaluated using a four point probe method. It was found that the H_c in Co layer varied with Cr thickness and it gradually enhanced up to around 100 Å.

Original language	English
Pages (from-to)	ES01
Journal	Digests of the Intermag Conference
State	Published - 2003
Event	Intermag 2003: International Magnetics Conference - Boston, MA, United States Duration: 28 Mar 2003 → 3 Apr 2003

Cite this

@article{f491045a5ad346079c2ae6a369e49909,

title = "Effect of surface roughness on plasma oxidation behavior of Al layer and tunneling magnetoresistance",

abstract = "The effect of surface roughness on plasma oxidation behavior of aluminum layer and on tunneling magnetoresistance (TMR) was discussed. The TMR and a junction resistance were evaluated using a four point probe method. It was found that the Hc in Co layer varied with Cr thickness and it gradually enhanced up to around 100 {\AA}.",

author = "Jeon, \{Dong Min\} and Park, \{Jin Woo\} and Yoon, \{Seong Yong\} and Lee, \{Du Hyun\} and Yoon, \{Dae Ho\} and Suh, \{Su Jeong\}",

year = "2003",

language = "English",

pages = "ES01",

journal = "Digests of the Intermag Conference",

issn = "0074-6843",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Intermag 2003: International Magnetics Conference ; Conference date: 28-03-2003 Through 03-04-2003",

}

TY - JOUR

T1 - Effect of surface roughness on plasma oxidation behavior of Al layer and tunneling magnetoresistance

AU - Jeon, Dong Min

AU - Park, Jin Woo

AU - Yoon, Seong Yong

AU - Lee, Du Hyun

AU - Yoon, Dae Ho

AU - Suh, Su Jeong

PY - 2003

Y1 - 2003

N2 - The effect of surface roughness on plasma oxidation behavior of aluminum layer and on tunneling magnetoresistance (TMR) was discussed. The TMR and a junction resistance were evaluated using a four point probe method. It was found that the Hc in Co layer varied with Cr thickness and it gradually enhanced up to around 100 Å.

AB - The effect of surface roughness on plasma oxidation behavior of aluminum layer and on tunneling magnetoresistance (TMR) was discussed. The TMR and a junction resistance were evaluated using a four point probe method. It was found that the Hc in Co layer varied with Cr thickness and it gradually enhanced up to around 100 Å.

UR - https://www.scopus.com/pages/publications/18844477985

M3 - Conference article

AN - SCOPUS:18844477985

SN - 0074-6843

SP - ES01

JO - Digests of the Intermag Conference

JF - Digests of the Intermag Conference

T2 - Intermag 2003: International Magnetics Conference

Y2 - 28 March 2003 through 3 April 2003

ER -

Effect of surface roughness on plasma oxidation behavior of Al layer and tunneling magnetoresistance

Abstract

Other files and links

Fingerprint

Cite this