Effect of plasma modulation on Si chemical dry etching in F2 remote plasmas

Y. B. Yun; S. M. Park; N. E. Lee

doi:10.3938/jkps.53.2386

Effect of plasma modulation on Si chemical dry etching in F₂ remote plasmas

Y. B. Yun
, S. M. Park
, N. E. Lee

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Nitric oxide (NO) gas directly injected into the chamber enhanced the Si chemical dry etch (CDE) rate in F₂ remote plasmas but, this rate gradually decreased with increasing etch time. By simultaneously modulating the on/off time of F₂ remote plasmas and NO injection, we could increase the Si etch depth during the same total plasma-on time. The increased etch depth with increasing plasma-off time was ascribed to enhanced desorption of etch product molecules on the Si surface during the plasma-off time.

Original language	English
Pages (from-to)	2386-2390
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	5 PART 1
DOIs	https://doi.org/10.3938/jkps.53.2386
State	Published - Nov 2008

Keywords

Chemical dry etching
Fourier transform-infrared spectroscope
Remote plasma
Si removal process

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title = "Effect of plasma modulation on Si chemical dry etching in F2 remote plasmas",

abstract = "Nitric oxide (NO) gas directly injected into the chamber enhanced the Si chemical dry etch (CDE) rate in F2 remote plasmas but, this rate gradually decreased with increasing etch time. By simultaneously modulating the on/off time of F2 remote plasmas and NO injection, we could increase the Si etch depth during the same total plasma-on time. The increased etch depth with increasing plasma-off time was ascribed to enhanced desorption of etch product molecules on the Si surface during the plasma-off time.",

keywords = "Chemical dry etching, Fourier transform-infrared spectroscope, Remote plasma, Si removal process",

author = "Yun, \{Y. B.\} and Park, \{S. M.\} and Lee, \{N. E.\}",

year = "2008",

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doi = "10.3938/jkps.53.2386",

language = "English",

volume = "53",

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TY - JOUR

T1 - Effect of plasma modulation on Si chemical dry etching in F2 remote plasmas

AU - Yun, Y. B.

AU - Park, S. M.

AU - Lee, N. E.

PY - 2008/11

Y1 - 2008/11

N2 - Nitric oxide (NO) gas directly injected into the chamber enhanced the Si chemical dry etch (CDE) rate in F2 remote plasmas but, this rate gradually decreased with increasing etch time. By simultaneously modulating the on/off time of F2 remote plasmas and NO injection, we could increase the Si etch depth during the same total plasma-on time. The increased etch depth with increasing plasma-off time was ascribed to enhanced desorption of etch product molecules on the Si surface during the plasma-off time.

AB - Nitric oxide (NO) gas directly injected into the chamber enhanced the Si chemical dry etch (CDE) rate in F2 remote plasmas but, this rate gradually decreased with increasing etch time. By simultaneously modulating the on/off time of F2 remote plasmas and NO injection, we could increase the Si etch depth during the same total plasma-on time. The increased etch depth with increasing plasma-off time was ascribed to enhanced desorption of etch product molecules on the Si surface during the plasma-off time.

KW - Chemical dry etching

KW - Fourier transform-infrared spectroscope

KW - Remote plasma

KW - Si removal process

UR - https://www.scopus.com/pages/publications/57549101077

U2 - 10.3938/jkps.53.2386

DO - 10.3938/jkps.53.2386

M3 - Article

AN - SCOPUS:57549101077

SN - 0374-4884

VL - 53

SP - 2386

EP - 2390

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 5 PART 1

ER -

Effect of plasma modulation on Si chemical dry etching in F₂ remote plasmas

Abstract

Keywords

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