Effect of oxygen flow rate on the electrical properties of a transparent sionagsion multilayer

Chung Ki Cho; Sung Wng Kim; H. Hosono; Han Ki Kim

doi:10.1149/2.009202esl

Effect of oxygen flow rate on the electrical properties of a transparent sionagsion multilayer

Chung Ki Cho, Sung Wng Kim, H. Hosono, Han Ki Kim

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report the effects of oxygen flow rate on the electrical properties of transparent silicon oxynitride (SiON)AgSiON multilayer films, whose layers were formed via continuous sputtering. The SiONAgSiON multilayer that was sputtered at low oxygen flow rates (below 0.6 sccm) showed metallic conduction (ddT > 0) with a resistivity of 2.013 × 10 ^-4 Ohm-cm, while SiONAgSiON film grown at high oxygen flow rates exhibited insulating behavior. These opposing electrical behaviors are related to the transition of the inserted Ag layer from a continuous layer to a layer of randomly disconnected islands with increasing oxygen flow rate.

Original language	English
Pages (from-to)	H23-H26
Journal	Electrochemical and Solid-State Letters
Volume	15
Issue number	2
DOIs	https://doi.org/10.1149/2.009202esl
State	Published - 2012
Externally published	Yes

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@article{4a4e34212aca459fb8687cc00f281a84,

title = "Effect of oxygen flow rate on the electrical properties of a transparent sionagsion multilayer",

abstract = "We report the effects of oxygen flow rate on the electrical properties of transparent silicon oxynitride (SiON)AgSiON multilayer films, whose layers were formed via continuous sputtering. The SiONAgSiON multilayer that was sputtered at low oxygen flow rates (below 0.6 sccm) showed metallic conduction (ddT > 0) with a resistivity of 2.013 × 10 -4 Ohm-cm, while SiONAgSiON film grown at high oxygen flow rates exhibited insulating behavior. These opposing electrical behaviors are related to the transition of the inserted Ag layer from a continuous layer to a layer of randomly disconnected islands with increasing oxygen flow rate.",

author = "Cho, \{Chung Ki\} and Kim, \{Sung Wng\} and H. Hosono and Kim, \{Han Ki\}",

year = "2012",

doi = "10.1149/2.009202esl",

language = "English",

volume = "15",

pages = "H23--H26",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "2",

}

TY - JOUR

T1 - Effect of oxygen flow rate on the electrical properties of a transparent sionagsion multilayer

AU - Cho, Chung Ki

AU - Kim, Sung Wng

AU - Hosono, H.

AU - Kim, Han Ki

PY - 2012

Y1 - 2012

N2 - We report the effects of oxygen flow rate on the electrical properties of transparent silicon oxynitride (SiON)AgSiON multilayer films, whose layers were formed via continuous sputtering. The SiONAgSiON multilayer that was sputtered at low oxygen flow rates (below 0.6 sccm) showed metallic conduction (ddT > 0) with a resistivity of 2.013 × 10 -4 Ohm-cm, while SiONAgSiON film grown at high oxygen flow rates exhibited insulating behavior. These opposing electrical behaviors are related to the transition of the inserted Ag layer from a continuous layer to a layer of randomly disconnected islands with increasing oxygen flow rate.

AB - We report the effects of oxygen flow rate on the electrical properties of transparent silicon oxynitride (SiON)AgSiON multilayer films, whose layers were formed via continuous sputtering. The SiONAgSiON multilayer that was sputtered at low oxygen flow rates (below 0.6 sccm) showed metallic conduction (ddT > 0) with a resistivity of 2.013 × 10 -4 Ohm-cm, while SiONAgSiON film grown at high oxygen flow rates exhibited insulating behavior. These opposing electrical behaviors are related to the transition of the inserted Ag layer from a continuous layer to a layer of randomly disconnected islands with increasing oxygen flow rate.

UR - https://www.scopus.com/pages/publications/84055176848

U2 - 10.1149/2.009202esl

DO - 10.1149/2.009202esl

M3 - Article

AN - SCOPUS:84055176848

SN - 1099-0062

VL - 15

SP - H23-H26

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 2

ER -

Effect of oxygen flow rate on the electrical properties of a transparent sionagsion multilayer

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