Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

Jinjoo Park; Seungman Park; Sunwha Lee; Youngkuk Kim; Chonghoon Shin; Seungsin Baek; Daeyeong Gong; Junsin Yi

Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

Jinjoo Park
, Seungman Park
, Sunwha Lee
, Youngkuk Kim
, Chonghoon Shin
, Seungsin Baek
, Daeyeong Gong
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N₂O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high E_opt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted E_opt of the p-type layer by varying the N₂O and B₂H₆ gas ratio. The p-type a-SiO_x films have the E_opt values of about 1.99 eV.

Original language	English
Title of host publication	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages	687-688
Number of pages	2
State	Published - 2010
Event	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of Duration: 11 Oct 2010 → 15 Oct 2010

Publication series

Name	Proceedings of International Meeting on Information Display
ISSN (Print)	1738-7558

Conference

Conference	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/Territory	Korea, Republic of
City	Seoul
Period	11/10/10 → 15/10/10

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Amorphous silicon sub-oxide thin films
BH
NO
PECVD

Cite this

Park, J., Park, S., Lee, S., Kim, Y., Shin, C., Baek, S., Gong, D., & Yi, J. (2010). Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. In 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 (pp. 687-688). (Proceedings of International Meeting on Information Display).

Park, Jinjoo ; Park, Seungman ; Lee, Sunwha et al. / Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. pp. 687-688 (Proceedings of International Meeting on Information Display).

@inproceedings{99154b32c165437c860e7d8943f3797a,

title = "Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer",

abstract = "We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N2O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high Eopt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted Eopt of the p-type layer by varying the N2O and B2H6 gas ratio. The p-type a-SiOx films have the Eopt values of about 1.99 eV.",

keywords = "Amorphous silicon sub-oxide thin films, BH, NO, PECVD",

author = "Jinjoo Park and Seungman Park and Sunwha Lee and Youngkuk Kim and Chonghoon Shin and Seungsin Baek and Daeyeong Gong and Junsin Yi",

year = "2010",

language = "English",

isbn = "9781617827020",

series = "Proceedings of International Meeting on Information Display",

pages = "687--688",

booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",

note = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",

}

Park, J, Park, S, Lee, S, Kim, Y, Shin, C, Baek, S, Gong, D & Yi, J 2010, Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. in 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. Proceedings of International Meeting on Information Display, pp. 687-688, 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, Seoul, Korea, Republic of, 11/10/10.

Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. / Park, Jinjoo; Park, Seungman; Lee, Sunwha et al.
10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. p. 687-688 (Proceedings of International Meeting on Information Display).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

AU - Park, Jinjoo

AU - Park, Seungman

AU - Lee, Sunwha

AU - Kim, Youngkuk

AU - Shin, Chonghoon

AU - Baek, Seungsin

AU - Gong, Daeyeong

AU - Yi, Junsin

PY - 2010

Y1 - 2010

N2 - We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N2O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high Eopt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted Eopt of the p-type layer by varying the N2O and B2H6 gas ratio. The p-type a-SiOx films have the Eopt values of about 1.99 eV.

AB - We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N2O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high Eopt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted Eopt of the p-type layer by varying the N2O and B2H6 gas ratio. The p-type a-SiOx films have the Eopt values of about 1.99 eV.

KW - Amorphous silicon sub-oxide thin films

KW - BH

KW - NO

KW - PECVD

UR - https://www.scopus.com/pages/publications/79959943131

M3 - Conference contribution

AN - SCOPUS:79959943131

SN - 9781617827020

T3 - Proceedings of International Meeting on Information Display

SP - 687

EP - 688

BT - 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010

T2 - 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010

Y2 - 11 October 2010 through 15 October 2010

ER -

Park J, Park S, Lee S, Kim Y, Shin C, Baek S et al. Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. In 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. p. 687-688. (Proceedings of International Meeting on Information Display).

Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

Abstract

Publication series

Conference

UN SDGs

Keywords

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