Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

Jinjoo Park; Seungman Park; Sunwha Lee; Youngkuk Kim; Chonghoon Shin; Seungsin Baek; Daeyeong Gong; Junsin Yi

Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

Jinjoo Park
, Seungman Park
, Sunwha Lee
, Youngkuk Kim
, Chonghoon Shin
, Seungsin Baek
, Daeyeong Gong
, Junsin Yi

Department of Electronic and Electrical Engineering

Sungkyunkwan University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N₂O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high E_opt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted E_opt of the p-type layer by varying the N₂O and B₂H₆ gas ratio. The p-type a-SiO_x films have the E_opt values of about 1.99 eV.

Original language	English
Title of host publication	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Pages	687-688
Number of pages	2
State	Published - 2010
Event	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 - Seoul, Korea, Republic of Duration: 11 Oct 2010 → 15 Oct 2010

Publication series

Name	Proceedings of International Meeting on Information Display
ISSN (Print)	1738-7558

Conference

Conference	10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010
Country/Territory	Korea, Republic of
City	Seoul
Period	11/10/10 → 15/10/10

Keywords

Amorphous silicon sub-oxide thin films
BH
NO
PECVD

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Cite this

Park, J., Park, S., Lee, S., Kim, Y., Shin, C., Baek, S., Gong, D., & Yi, J. (2010). Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. In 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 (pp. 687-688). (Proceedings of International Meeting on Information Display).

Park, Jinjoo ; Park, Seungman ; Lee, Sunwha et al. / Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. pp. 687-688 (Proceedings of International Meeting on Information Display).

@inproceedings{99154b32c165437c860e7d8943f3797a,

title = "Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer",

abstract = "We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N2O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high Eopt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted Eopt of the p-type layer by varying the N2O and B2H6 gas ratio. The p-type a-SiOx films have the Eopt values of about 1.99 eV.",

keywords = "Amorphous silicon sub-oxide thin films, BH, NO, PECVD",

author = "Jinjoo Park and Seungman Park and Sunwha Lee and Youngkuk Kim and Chonghoon Shin and Seungsin Baek and Daeyeong Gong and Junsin Yi",

year = "2010",

language = "English",

isbn = "9781617827020",

series = "Proceedings of International Meeting on Information Display",

pages = "687--688",

booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",

note = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",

}

Park, J, Park, S, Lee, S, Kim, Y, Shin, C, Baek, S, Gong, D & Yi, J 2010, Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. in 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. Proceedings of International Meeting on Information Display, pp. 687-688, 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010, Seoul, Korea, Republic of, 11/10/10.

Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. / Park, Jinjoo; Park, Seungman; Lee, Sunwha et al.
10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. p. 687-688 (Proceedings of International Meeting on Information Display).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

AU - Park, Jinjoo

AU - Park, Seungman

AU - Lee, Sunwha

AU - Kim, Youngkuk

AU - Shin, Chonghoon

AU - Baek, Seungsin

AU - Gong, Daeyeong

AU - Yi, Junsin

PY - 2010

Y1 - 2010

N2 - We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N2O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high Eopt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted Eopt of the p-type layer by varying the N2O and B2H6 gas ratio. The p-type a-SiOx films have the Eopt values of about 1.99 eV.

AB - We report on the electrical and optical characterization of a-SiOx thin films prepared using silane and diluted N2O by Helium for PECVD on glass and silicon substrates. In a thin film solar cell, the p-type layer should have a high Eopt to minimize optical absorption, as well as high conductivity for improved cell efficiency. We adjusted Eopt of the p-type layer by varying the N2O and B2H6 gas ratio. The p-type a-SiOx films have the Eopt values of about 1.99 eV.

KW - Amorphous silicon sub-oxide thin films

KW - BH

KW - NO

KW - PECVD

UR - https://www.scopus.com/pages/publications/79959943131

M3 - Conference contribution

AN - SCOPUS:79959943131

SN - 9781617827020

T3 - Proceedings of International Meeting on Information Display

SP - 687

EP - 688

BT - 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010

T2 - 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010

Y2 - 11 October 2010 through 15 October 2010

ER -

Park J, Park S, Lee S, Kim Y, Shin C, Baek S et al. Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer. In 10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010. 2010. p. 687-688. (Proceedings of International Meeting on Information Display).

Effect of oxygen and diborane gas ratio on P-type amorphous silicon suboxides layer

Abstract

Publication series

Conference

Keywords

UN SDGs

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