Effect of N2 O plasma treatment on the performance of ZnO TFTs

K. Remashan; D. K. Hwang; S. D. Park; J. W. Bae; G. Y. Yeom; S. J. Park; J. H. Jang

doi:10.1149/1.2822885

Effect of N2 O plasma treatment on the performance of ZnO TFTs

K. Remashan, D. K. Hwang, S. D. Park, J. W. Bae, G. Y. Yeom, S. J. Park, J. H. Jang

Department of Advanced Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2 O) plasma treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms of off current and on/off current ratio by almost 2 orders of magnitude. The off current of 2× 10-8 A and on/off current ratio of 3× 103 obtained after RTA were improved to 10-10 A and 105, respectively, by the subsequent N2 O plasma treatment. X-ray photoelectron spectroscopy analysis of the TFT samples showed that the RTA-treated ZnO surface had more oxygen vacancies as compared to as-deposited samples, and the oxygen vacancies at the surface of RTA-treated ZnO were reduced by subsequent N2 O plasma treatment. The reduction of oxygen vacancies at the top region of the ZnO channel is the cause of better off current and on/off current ratio of the TFTs.

Original language	English
Pages (from-to)	H55-H59
Journal	Electrochemical and Solid-State Letters
Volume	11
Issue number	3
DOIs	https://doi.org/10.1149/1.2822885
State	Published - 2008

Access to Document

10.1149/1.2822885

Cite this

@article{3175b6587e644b058409194a8a570a48,

title = "Effect of N2 O plasma treatment on the performance of ZnO TFTs",

abstract = "Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2 O) plasma treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms of off current and on/off current ratio by almost 2 orders of magnitude. The off current of 2× 10-8 A and on/off current ratio of 3× 103 obtained after RTA were improved to 10-10 A and 105, respectively, by the subsequent N2 O plasma treatment. X-ray photoelectron spectroscopy analysis of the TFT samples showed that the RTA-treated ZnO surface had more oxygen vacancies as compared to as-deposited samples, and the oxygen vacancies at the surface of RTA-treated ZnO were reduced by subsequent N2 O plasma treatment. The reduction of oxygen vacancies at the top region of the ZnO channel is the cause of better off current and on/off current ratio of the TFTs.",

author = "K. Remashan and Hwang, \{D. K.\} and Park, \{S. D.\} and Bae, \{J. W.\} and Yeom, \{G. Y.\} and Park, \{S. J.\} and Jang, \{J. H.\}",

year = "2008",

doi = "10.1149/1.2822885",

language = "English",

volume = "11",

pages = "H55--H59",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "3",

}

TY - JOUR

T1 - Effect of N2 O plasma treatment on the performance of ZnO TFTs

AU - Remashan, K.

AU - Hwang, D. K.

AU - Park, S. D.

AU - Bae, J. W.

AU - Yeom, G. Y.

AU - Park, S. J.

AU - Jang, J. H.

PY - 2008

Y1 - 2008

N2 - Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2 O) plasma treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms of off current and on/off current ratio by almost 2 orders of magnitude. The off current of 2× 10-8 A and on/off current ratio of 3× 103 obtained after RTA were improved to 10-10 A and 105, respectively, by the subsequent N2 O plasma treatment. X-ray photoelectron spectroscopy analysis of the TFT samples showed that the RTA-treated ZnO surface had more oxygen vacancies as compared to as-deposited samples, and the oxygen vacancies at the surface of RTA-treated ZnO were reduced by subsequent N2 O plasma treatment. The reduction of oxygen vacancies at the top region of the ZnO channel is the cause of better off current and on/off current ratio of the TFTs.

AB - Postfabrication rapid thermal annealing (RTA) and subsequent nitrous oxide (N2 O) plasma treatment improved the performance of zinc oxide (ZnO) thin-film transistors (TFTs) in terms of off current and on/off current ratio by almost 2 orders of magnitude. The off current of 2× 10-8 A and on/off current ratio of 3× 103 obtained after RTA were improved to 10-10 A and 105, respectively, by the subsequent N2 O plasma treatment. X-ray photoelectron spectroscopy analysis of the TFT samples showed that the RTA-treated ZnO surface had more oxygen vacancies as compared to as-deposited samples, and the oxygen vacancies at the surface of RTA-treated ZnO were reduced by subsequent N2 O plasma treatment. The reduction of oxygen vacancies at the top region of the ZnO channel is the cause of better off current and on/off current ratio of the TFTs.

UR - https://www.scopus.com/pages/publications/38349085365

U2 - 10.1149/1.2822885

DO - 10.1149/1.2822885

M3 - Article

AN - SCOPUS:38349085365

SN - 1099-0062

VL - 11

SP - H55-H59

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 3

ER -

Effect of N2 O plasma treatment on the performance of ZnO TFTs

Abstract

Access to Document

Other files and links

Fingerprint

Cite this