@inproceedings{f60c260c19d64023bf9dfa30a1c47551,
title = "Effect of N doping on solution-processed indium zinc tin oxide thin film transistors",
abstract = "Thin film transistors TFTs with nitrogen doped indium zinc tin oxide channel layer were fabricated and characterized. Heavily doped Si was used as a common gate electrode and PECVD Silicon nitride (SiNx) was used as a gete dielectric material for the TFT. Source and drain electrodes were deposited on the SiNx layer and IZTO:N layer was formed by spin-coating method.",
keywords = "Oxide, PECVD, SiN, TFT, ZnO",
author = "Kim, \{Bong Jin\} and Kim, \{Hyung Jun\} and Jung, \{Sung Mok\} and Yoon, \{Tae Sik\} and Kim, \{Yong Sang\} and Lee, \{Hyun Ho\}",
year = "2010",
language = "English",
isbn = "9781617827020",
series = "Proceedings of International Meeting on Information Display",
pages = "675--676",
booktitle = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010",
note = "10th International Meeting on Information Display and International Display Manufacturing Conference and Asia Display 2010, IMID/IDMC/ASIA Display 2010 ; Conference date: 11-10-2010 Through 15-10-2010",
}