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Effect of Millisecond Annealing Temperature of Ni1-xPtx Si Formation on Leakage Current Characteristics of Static Random- Access Memory Cells

  • Jinbum Kim
  • , Taejin Park
  • , Seounghoon Lee
  • , Siyoung Lee
  • , Chulsung Kim
  • , Sangjin Hyun
  • , Yihwan Kim
  • , Kihyun Hwang
  • , Hyoungsub Kim
  • Samsung
  • Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

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