Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

Jeong Min Baik; Ho Won Jang; Jong Kyu Kim; Jong Lam Lee

doi:10.1063/1.1541111

Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

Jeong Min Baik, Ho Won Jang, Jong Kyu Kim, Jong Lam Lee

Pohang University of Science and Technology

Research output: Contribution to journal › Article › peer-review

73 Scopus citations

Abstract

The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.

Original language	English
Pages (from-to)	583-585
Number of pages	3
Journal	Applied Physics Letters
Volume	82
Issue number	4
DOIs	https://doi.org/10.1063/1.1541111
State	Published - 27 Jan 2003
Externally published	Yes

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title = "Effect of microstructural change on magnetic property of Mn-implanted p-type GaN",

abstract = "The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.",

author = "Baik, \{Jeong Min\} and Jang, \{Ho Won\} and Kim, \{Jong Kyu\} and Lee, \{Jong Lam\}",

year = "2003",

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T1 - Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

AU - Baik, Jeong Min

AU - Jang, Ho Won

AU - Kim, Jong Kyu

AU - Lee, Jong Lam

PY - 2003/1/27

Y1 - 2003/1/27

N2 - The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.

AB - The Mn ions were implanted into p-type GaN and annealed to achieve a dilute magnetic semiconductor. The ferromagnetic property was obtained and attributed to the formation of Ga-Mn magnetic phases. The ferromagnetic signal was reduced and antiferromagnetic Mn-N compounds were produced at higher temperature annealing at 900 °C. Results showed that N vacancies play a crucial role in weakening the ferromagnetic property in the Mn-implanted GaN.

UR - https://www.scopus.com/pages/publications/0037468076

U2 - 10.1063/1.1541111

DO - 10.1063/1.1541111

M3 - Article

AN - SCOPUS:0037468076

SN - 0003-6951

VL - 82

SP - 583

EP - 585

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

Effect of microstructural change on magnetic property of Mn-implanted p-type GaN

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