Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

Sanghyun You; Eunjae Sun; Heeyeop Chae; Chang Koo Kim

doi:10.3390/ma17163917

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O₂/Ar Plasma

Sanghyun You
, Eunjae Sun
, Heeyeop Chae
, Chang Koo Kim

Department of Chemical Engineering

Ajou University

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O₂/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.

Original language	English
Article number	3917
Journal	Materials
Volume	17
Issue number	16
DOIs	https://doi.org/10.3390/ma17163917
State	Published - Aug 2024

Keywords

etch rate
global warming potential
HFE-347mmy
plasma etching
SiC

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10.3390/ma17163917

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title = "Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma",

abstract = "This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.",

keywords = "etch rate, global warming potential, HFE-347mmy, plasma etching, SiC",

author = "Sanghyun You and Eunjae Sun and Heeyeop Chae and Kim, \{Chang Koo\}",

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T1 - Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O2/Ar Plasma

AU - You, Sanghyun

AU - Sun, Eunjae

AU - Chae, Heeyeop

AU - Kim, Chang Koo

PY - 2024/8

Y1 - 2024/8

N2 - This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.

AB - This study explores the impact of varying discharge gas compositions on the etching performance of silicon carbide (SiC) in a heptafluoroisopropyl methyl ether (HFE-347mmy)/O2/Ar plasma. SiC is increasingly favored for high-temperature and high-power applications due to its wide bandgap and high dielectric strength, but its chemical stability makes it challenging to etch. This research explores the use of HFE-347mmy as a low-global-warming-potential (GWP) alternative to the conventional high-GWP fluorinated gasses that are typically used in plasma etching. By examining the behavior of SiC etch rates and analyzing the formation of fluorocarbon films and Si-O bonds, this study provides insights into optimizing plasma conditions for effective SiC etching, while addressing environmental concerns associated with high-GWP gasses.

KW - etch rate

KW - global warming potential

KW - HFE-347mmy

KW - plasma etching

KW - SiC

UR - https://www.scopus.com/pages/publications/85202433997

U2 - 10.3390/ma17163917

DO - 10.3390/ma17163917

M3 - Article

AN - SCOPUS:85202433997

SN - 1996-1944

VL - 17

JO - Materials

JF - Materials

IS - 16

M1 - 3917

ER -

Effect of Discharge Gas Composition on SiC Etching in an HFE-347mmy/O₂/Ar Plasma

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Keywords

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