Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

Ryun Han Koo; Wonjun Shin; Kyung Kyu Min; Dongseok Kwon; Dae Hwan Kim; Jae Joon Kim; Daewoong Kwon; Jong Ho Lee

doi:10.1109/LED.2022.3223340

Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

Ryun Han Koo
, Wonjun Shin
, Kyung Kyu Min
, Dongseok Kwon
, Dae Hwan Kim
, Jae Joon Kim
, Daewoong Kwon
, Jong Ho Lee

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Wedemonstrate the factors that determine the tunneling electroresistance (TER) of the ferroelectric tunnel junction (FTJ) by investigating the effects of temperature (T) and the number of cycles (N) on remnant polarization (Pr) and carrier transport process. The fabricated FTJs have a metal/ferroelectric/insulator/semiconductor structure. The Pr is increased with increasing T and N due to oxygen vacancy redistribution. However, the increased Pr in a higher T and N does not improve the TER ratio. Using current-voltage characterization and low-frequency noise spectroscopy, we reveal that the carrier transport process at the interface between the ferroelectric and dielectric layers becomes more important than Pr in determining the TER ratio.

Original language	English
Pages (from-to)	164-167
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	1
DOIs	https://doi.org/10.1109/LED.2022.3223340
State	Published - 1 Jan 2023
Externally published	Yes

Keywords

Carrier transport mechanism
ferroelectric tunnel junction (FTJ)
low-frequency noise (LFN)

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10.1109/LED.2022.3223340

Cite this

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title = "Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction",

abstract = "Wedemonstrate the factors that determine the tunneling electroresistance (TER) of the ferroelectric tunnel junction (FTJ) by investigating the effects of temperature (T) and the number of cycles (N) on remnant polarization (Pr) and carrier transport process. The fabricated FTJs have a metal/ferroelectric/insulator/semiconductor structure. The Pr is increased with increasing T and N due to oxygen vacancy redistribution. However, the increased Pr in a higher T and N does not improve the TER ratio. Using current-voltage characterization and low-frequency noise spectroscopy, we reveal that the carrier transport process at the interface between the ferroelectric and dielectric layers becomes more important than Pr in determining the TER ratio.",

keywords = "Carrier transport mechanism, ferroelectric tunnel junction (FTJ), low-frequency noise (LFN)",

author = "Koo, \{Ryun Han\} and Wonjun Shin and Min, \{Kyung Kyu\} and Dongseok Kwon and Kim, \{Dae Hwan\} and Kim, \{Jae Joon\} and Daewoong Kwon and Lee, \{Jong Ho\}",

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doi = "10.1109/LED.2022.3223340",

language = "English",

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T1 - Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

AU - Koo, Ryun Han

AU - Shin, Wonjun

AU - Min, Kyung Kyu

AU - Kwon, Dongseok

AU - Kim, Dae Hwan

AU - Kim, Jae Joon

AU - Kwon, Daewoong

AU - Lee, Jong Ho

PY - 2023/1/1

Y1 - 2023/1/1

N2 - Wedemonstrate the factors that determine the tunneling electroresistance (TER) of the ferroelectric tunnel junction (FTJ) by investigating the effects of temperature (T) and the number of cycles (N) on remnant polarization (Pr) and carrier transport process. The fabricated FTJs have a metal/ferroelectric/insulator/semiconductor structure. The Pr is increased with increasing T and N due to oxygen vacancy redistribution. However, the increased Pr in a higher T and N does not improve the TER ratio. Using current-voltage characterization and low-frequency noise spectroscopy, we reveal that the carrier transport process at the interface between the ferroelectric and dielectric layers becomes more important than Pr in determining the TER ratio.

AB - Wedemonstrate the factors that determine the tunneling electroresistance (TER) of the ferroelectric tunnel junction (FTJ) by investigating the effects of temperature (T) and the number of cycles (N) on remnant polarization (Pr) and carrier transport process. The fabricated FTJs have a metal/ferroelectric/insulator/semiconductor structure. The Pr is increased with increasing T and N due to oxygen vacancy redistribution. However, the increased Pr in a higher T and N does not improve the TER ratio. Using current-voltage characterization and low-frequency noise spectroscopy, we reveal that the carrier transport process at the interface between the ferroelectric and dielectric layers becomes more important than Pr in determining the TER ratio.

KW - Carrier transport mechanism

KW - ferroelectric tunnel junction (FTJ)

KW - low-frequency noise (LFN)

UR - https://www.scopus.com/pages/publications/85142797967

U2 - 10.1109/LED.2022.3223340

DO - 10.1109/LED.2022.3223340

M3 - Article

AN - SCOPUS:85142797967

SN - 0741-3106

VL - 44

SP - 164

EP - 167

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 1

ER -

Effect of Carrier Transport Process on Tunneling Electroresistance in Ferroelectric Tunnel Junction

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Keywords

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