Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors

Hyeonjung Park; Changwoo Han; Yejoo Choi; Myeongjae Choi; Sangmin Won; Changhwan Shin

doi:10.1109/LED.2025.3603933

Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf_0.5Zr_0.5O₂ Capacitors

Hyeonjung Park
, Changwoo Han
, Yejoo Choi
, Myeongjae Choi
, Sangmin Won
, Changhwan Shin

Research output: Contribution to journal › Article › peer-review

Abstract

In this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 °C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W₁₈O₄₉ layer was formed between the bottom electrode and HZO layer.

Original language	English
Pages (from-to)	2038-2041
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	46
Issue number	11
DOIs	https://doi.org/10.1109/LED.2025.3603933
State	Published - 2025
Externally published	Yes

Keywords

Ferroelectrics
HZO
HZO capacitor
MFM
endurance
tungsten electrode

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10.1109/LED.2025.3603933

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title = "Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors",

abstract = "In this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 °C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W18O49 layer was formed between the bottom electrode and HZO layer.",

keywords = "Ferroelectrics, HZO, HZO capacitor, MFM, endurance, tungsten electrode",

author = "Hyeonjung Park and Changwoo Han and Yejoo Choi and Myeongjae Choi and Sangmin Won and Changhwan Shin",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2025",

doi = "10.1109/LED.2025.3603933",

language = "English",

volume = "46",

pages = "2038--2041",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf0.5Zr0.5O2 Capacitors

AU - Park, Hyeonjung

AU - Han, Changwoo

AU - Choi, Yejoo

AU - Choi, Myeongjae

AU - Won, Sangmin

AU - Shin, Changhwan

PY - 2025

Y1 - 2025

N2 - In this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 °C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W18O49 layer was formed between the bottom electrode and HZO layer.

AB - In this study, endurance characteristics of W/HZO/W ferroelectric capacitors were improved by optimizing the annealing conditions of the tungsten (W) bottom electrode. The effects of annealing temperature and ambient on device performance were investigated. The W/HZO/W capacitor annealed at 600 °C under vacuum exhibited an endurance improvement of more than two orders of magnitude compared to the non-annealed capacitor. Depending on the annealing condition, tungsten diffusion into the HZO film was effectively suppressed, and a thin interfacial W18O49 layer was formed between the bottom electrode and HZO layer.

KW - Ferroelectrics

KW - HZO

KW - HZO capacitor

KW - MFM

KW - endurance

KW - tungsten electrode

UR - https://www.scopus.com/pages/publications/105014971028

U2 - 10.1109/LED.2025.3603933

DO - 10.1109/LED.2025.3603933

M3 - Article

AN - SCOPUS:105014971028

SN - 0741-3106

VL - 46

SP - 2038

EP - 2041

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Effect of Bottom Electrode Annealing Temperature and Atmosphere on Endurance Characteristics of Ferroelectric Hf_0.5Zr_0.5O₂ Capacitors

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