Effect of boron doping on the properties of chemically deposited CDS films

Jaehyeong Lee; Junsin Yi; Keajoon Yang

Effect of boron doping on the properties of chemically deposited CDS films

Jaehyeong Lee
, Junsin Yi
, Keajoon Yang

Department of Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Boron-doped CdS films were prepared by chemical bath deposition using boric acid as dopant source, and their electrical and optical properties were investigated. As the boron doping concentration increased, the resistivity significantly decreased and exhibited the lowest resistivity of 2 Ω-cm at 0.01 of [B/Cd] ratio. The characteristics of the CdS/CdTe solar cell improved when used boron doped CdS film as the window layer.

Original language	English
Title of host publication	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Editors	K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
Pages	543-546
Number of pages	4
State	Published - 2003
Event	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan Duration: 11 May 2003 → 18 May 2003

Publication series

Name	Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
Volume	A

Conference

Conference	Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion
Country/Territory	Japan
City	Osaka
Period	11/05/03 → 18/05/03

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Cite this

Lee, Jaehyeong ; Yi, Junsin ; Yang, Keajoon. / Effect of boron doping on the properties of chemically deposited CDS films. Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. editor / K. Kurokawa ; L.L. Kazmerski ; B. McNeils ; M. Yamaguchi ; C. Wronski. 2003. pp. 543-546 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion).

@inproceedings{e5518d7cf41d49a1a90ef8e80b9c9bd0,

title = "Effect of boron doping on the properties of chemically deposited CDS films",

abstract = "Boron-doped CdS films were prepared by chemical bath deposition using boric acid as dopant source, and their electrical and optical properties were investigated. As the boron doping concentration increased, the resistivity significantly decreased and exhibited the lowest resistivity of 2 Ω-cm at 0.01 of [B/Cd] ratio. The characteristics of the CdS/CdTe solar cell improved when used boron doped CdS film as the window layer.",

author = "Jaehyeong Lee and Junsin Yi and Keajoon Yang",

year = "2003",

language = "English",

isbn = "4990181603",

series = "Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion",

pages = "543--546",

editor = "K. Kurokawa and L.L. Kazmerski and B. McNeils and M. Yamaguchi and C. Wronski",

booktitle = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion",

note = "Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion ; Conference date: 11-05-2003 Through 18-05-2003",

}

Lee, J , Yi, J & Yang, K 2003, Effect of boron doping on the properties of chemically deposited CDS films. in K Kurokawa, LL Kazmerski, B McNeils, M Yamaguchi & C Wronski (eds), Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion, vol. A, pp. 543-546, Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion, Osaka, Japan, 11/05/03.

Effect of boron doping on the properties of chemically deposited CDS films. / Lee, Jaehyeong ; Yi, Junsin; Yang, Keajoon.
Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion. ed. / K. Kurokawa; L.L. Kazmerski; B. McNeils; M. Yamaguchi; C. Wronski. 2003. p. 543-546 (Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion; Vol. A).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Effect of boron doping on the properties of chemically deposited CDS films

AU - Lee, Jaehyeong

AU - Yi, Junsin

AU - Yang, Keajoon

PY - 2003

Y1 - 2003

N2 - Boron-doped CdS films were prepared by chemical bath deposition using boric acid as dopant source, and their electrical and optical properties were investigated. As the boron doping concentration increased, the resistivity significantly decreased and exhibited the lowest resistivity of 2 Ω-cm at 0.01 of [B/Cd] ratio. The characteristics of the CdS/CdTe solar cell improved when used boron doped CdS film as the window layer.

AB - Boron-doped CdS films were prepared by chemical bath deposition using boric acid as dopant source, and their electrical and optical properties were investigated. As the boron doping concentration increased, the resistivity significantly decreased and exhibited the lowest resistivity of 2 Ω-cm at 0.01 of [B/Cd] ratio. The characteristics of the CdS/CdTe solar cell improved when used boron doped CdS film as the window layer.

UR - https://www.scopus.com/pages/publications/6344280791

M3 - Conference contribution

AN - SCOPUS:6344280791

SN - 4990181603

SN - 9784990181604

T3 - Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion

SP - 543

EP - 546

BT - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

A2 - Kurokawa, K.

A2 - Kazmerski, L.L.

A2 - McNeils, B.

A2 - Yamaguchi, M.

A2 - Wronski, C.

T2 - Proceddings of the 3rd World Conference on Photovoltaic Energy Conversion

Y2 - 11 May 2003 through 18 May 2003

ER -

Effect of boron doping on the properties of chemically deposited CDS films

Abstract

Publication series

Conference

UN SDGs

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