TY - JOUR
T1 - Effect of atomic-layer-deposition sequence on the composition of indium-zinc-tin oxide thin films and its effect on thin-film transistor characteristics
AU - Jeong, Yurim
AU - Na, Chang Yun
AU - Cho, Sung Min
N1 - Publisher Copyright:
© 2025
PY - 2025/9/1
Y1 - 2025/9/1
N2 - Indium-zinc-tin oxide (IZTO) thin films were deposited via atomic layer deposition (ALD) using In and Sn precursors that have not been reported yet. The temperature ranges in which ALD of In2O3, ZnO, and SnO2 thin films was possible were determined, and the IZTO thin films were deposited at 170°C, which all ranges overlap. The In2O3, ZnO, and SnO2 thin films deposited by ALD showed a composition that was almost stoichiometric. The effect of the deposition order of three metal oxides on the composition of IZTO was investigated. It was found that the deposition of ZnO was inhibited when ZnO ALD was performed immediately after SnO2 ALD. Therefore, the preferred ALD sequence for IZTO thin films is SnO2, In2O3, and ZnO. In one supercycle for IZTO ALD, the number of subcycles of In2O3 was fixed to 1 and the number of subcycles of ZnO and SnO2 was varied, and the changes in the electrical properties of IZTO were observed. Two IZTO compositions exhibiting distinctly different electrical characteristics were selected and applied to the upper and lower channels of a dual-channel IZTO thin-film transistor (TFT). By controlling the position and thickness of two IZTO channel layers with different characteristics, it was shown that a TFT with constructively combined characteristics is possible by collecting only the excellent electrical characteristics of each IZTO channel layer.
AB - Indium-zinc-tin oxide (IZTO) thin films were deposited via atomic layer deposition (ALD) using In and Sn precursors that have not been reported yet. The temperature ranges in which ALD of In2O3, ZnO, and SnO2 thin films was possible were determined, and the IZTO thin films were deposited at 170°C, which all ranges overlap. The In2O3, ZnO, and SnO2 thin films deposited by ALD showed a composition that was almost stoichiometric. The effect of the deposition order of three metal oxides on the composition of IZTO was investigated. It was found that the deposition of ZnO was inhibited when ZnO ALD was performed immediately after SnO2 ALD. Therefore, the preferred ALD sequence for IZTO thin films is SnO2, In2O3, and ZnO. In one supercycle for IZTO ALD, the number of subcycles of In2O3 was fixed to 1 and the number of subcycles of ZnO and SnO2 was varied, and the changes in the electrical properties of IZTO were observed. Two IZTO compositions exhibiting distinctly different electrical characteristics were selected and applied to the upper and lower channels of a dual-channel IZTO thin-film transistor (TFT). By controlling the position and thickness of two IZTO channel layers with different characteristics, it was shown that a TFT with constructively combined characteristics is possible by collecting only the excellent electrical characteristics of each IZTO channel layer.
KW - Atomic layer deposition
KW - Indium-zinc-tin oxide
KW - Oxide semiconductor
KW - Thin-film transistor
UR - https://www.scopus.com/pages/publications/105007645320
U2 - 10.1016/j.tsf.2025.140714
DO - 10.1016/j.tsf.2025.140714
M3 - Article
AN - SCOPUS:105007645320
SN - 0040-6090
VL - 825
JO - Thin Solid Films
JF - Thin Solid Films
M1 - 140714
ER -