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Edge-defined film-fed growth of Yb:YVO4 single crystals: Approaches to produce a few crystals simultaneously

  • V. V. Kochurikhin
  • , A. E. Borisova
  • , M. A. Ivanov
  • , V. E. Shukshin
  • , S. N. Ushakov
  • , S. J. Suh
  • , D. H. Yoon
  • General Physics Institute

Research output: Contribution to journalArticlepeer-review

Abstract

The applicability of the EFG technique of yttrium orthovanadate was confirmed by successful growth of a few single crystals simultaneously. Yb-doped single crystals with a content of Yb3+ ions of 10 atomic % in the starting melt were grown by the EFG technique with a length up to 50 mm as 4 items simultaneously. Good homogeneity was observed for Yb-doped crystals. The segregation coefficient of Yb3+ ions was very close to unity. Absorption and photoluminescence (PL) spectra of grown crystals were measured.

Original languageEnglish
Pages (from-to)109-111
Number of pages3
JournalJournal of Ceramic Processing Research
Volume4
Issue number3
StatePublished - 2003

Keywords

  • Edge defined film-fed growth
  • Rare-earth
  • Vanadates

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