Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

Luyang Wang; Jie Lian; Peng Cui; Yang Xu; Sohyeon Seo; Junghyun Lee; Yinthai Chan; Hyoyoung Lee

doi:10.1039/c2cc17543f

Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

Luyang Wang
, Jie Lian
, Peng Cui
, Yang Xu
, Sohyeon Seo
, Junghyun Lee
, Yinthai Chan
, Hyoyoung Lee

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

Original language	English
Pages (from-to)	4052-4054
Number of pages	3
Journal	Chemical Communications
Volume	48
Issue number	34
DOIs	https://doi.org/10.1039/c2cc17543f
State	Published - 28 Mar 2012

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title = "Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals",

abstract = "Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.",

author = "Luyang Wang and Jie Lian and Peng Cui and Yang Xu and Sohyeon Seo and Junghyun Lee and Yinthai Chan and Hyoyoung Lee",

year = "2012",

month = mar,

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doi = "10.1039/c2cc17543f",

language = "English",

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TY - JOUR

T1 - Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

AU - Wang, Luyang

AU - Lian, Jie

AU - Cui, Peng

AU - Xu, Yang

AU - Seo, Sohyeon

AU - Lee, Junghyun

AU - Chan, Yinthai

AU - Lee, Hyoyoung

PY - 2012/3/28

Y1 - 2012/3/28

N2 - Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

AB - Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

UR - https://www.scopus.com/pages/publications/84859125998

U2 - 10.1039/c2cc17543f

DO - 10.1039/c2cc17543f

M3 - Article

AN - SCOPUS:84859125998

SN - 1359-7345

VL - 48

SP - 4052

EP - 4054

JO - Chemical Communications

JF - Chemical Communications

IS - 34

ER -

Dual n-type doped reduced graphene oxide field effect transistors controlled by semiconductor nanocrystals

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