Dual-gate shorted-anode LIGBT with p+ injector eliminating the negative resistance regime

Byeong Hoon Lee; Seong Dong Kim; Dae Seok Byeon; Jung Hoon Chun; Min Koo Han; Yeam Ik Choi

Dual-gate shorted-anode LIGBT with p⁺ injector eliminating the negative resistance regime

Byeong Hoon Lee, Seong Dong Kim, Dae Seok Byeon, Jung Hoon Chun, Min Koo Han, Yeam Ik Choi

Seoul National University

Research output: Contribution to conference › Paper › peer-review

11 Scopus citations

Abstract

A new SALIGBT with dual gate and p+ injector, entitled DG-SALIGBT, is proposed and fabricated in order to eliminate the negative differential resistance (NDR) regime, which is the inherent characteristics of SALIGBT, by modulating the drift region conductivity gradually. The experimental results show that the NDR regime is eliminated completely and the forward voltage drop is reduced considerably in the DG-SALIGBT when compared with the conventional SALIGBT without sacrificing the switching speed. We have analyzed the device operation mechanism such as hole injection phenomena by using the 2-dimensional numerical simulation.

Original language	English
Pages	269-272
Number of pages	4
State	Published - 1998
Externally published	Yes
Event	Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98 - Kyoto, Jpn Duration: 3 Jun 1998 → 6 Jun 1998

Conference

Conference	Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98
City	Kyoto, Jpn
Period	3/06/98 → 6/06/98

Cite this

@conference{89fe4c48a7b448fbb346b1ddd7fcc4e9,

title = "Dual-gate shorted-anode LIGBT with p+ injector eliminating the negative resistance regime",

abstract = "A new SALIGBT with dual gate and p+ injector, entitled DG-SALIGBT, is proposed and fabricated in order to eliminate the negative differential resistance (NDR) regime, which is the inherent characteristics of SALIGBT, by modulating the drift region conductivity gradually. The experimental results show that the NDR regime is eliminated completely and the forward voltage drop is reduced considerably in the DG-SALIGBT when compared with the conventional SALIGBT without sacrificing the switching speed. We have analyzed the device operation mechanism such as hole injection phenomena by using the 2-dimensional numerical simulation.",

author = "Lee, \{Byeong Hoon\} and Kim, \{Seong Dong\} and Byeon, \{Dae Seok\} and Chun, \{Jung Hoon\} and Han, \{Min Koo\} and Choi, \{Yeam Ik\}",

year = "1998",

language = "English",

pages = "269--272",

note = "Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices \& ICs, ISPSD'98 ; Conference date: 03-06-1998 Through 06-06-1998",

}

TY - CONF

T1 - Dual-gate shorted-anode LIGBT with p+ injector eliminating the negative resistance regime

AU - Lee, Byeong Hoon

AU - Kim, Seong Dong

AU - Byeon, Dae Seok

AU - Chun, Jung Hoon

AU - Han, Min Koo

AU - Choi, Yeam Ik

PY - 1998

Y1 - 1998

N2 - A new SALIGBT with dual gate and p+ injector, entitled DG-SALIGBT, is proposed and fabricated in order to eliminate the negative differential resistance (NDR) regime, which is the inherent characteristics of SALIGBT, by modulating the drift region conductivity gradually. The experimental results show that the NDR regime is eliminated completely and the forward voltage drop is reduced considerably in the DG-SALIGBT when compared with the conventional SALIGBT without sacrificing the switching speed. We have analyzed the device operation mechanism such as hole injection phenomena by using the 2-dimensional numerical simulation.

AB - A new SALIGBT with dual gate and p+ injector, entitled DG-SALIGBT, is proposed and fabricated in order to eliminate the negative differential resistance (NDR) regime, which is the inherent characteristics of SALIGBT, by modulating the drift region conductivity gradually. The experimental results show that the NDR regime is eliminated completely and the forward voltage drop is reduced considerably in the DG-SALIGBT when compared with the conventional SALIGBT without sacrificing the switching speed. We have analyzed the device operation mechanism such as hole injection phenomena by using the 2-dimensional numerical simulation.

UR - https://www.scopus.com/pages/publications/0031640572

M3 - Paper

AN - SCOPUS:0031640572

SP - 269

EP - 272

T2 - Proceedings of the 1998 10th International Symposium on Power Semiconductor Devices & ICs, ISPSD'98

Y2 - 3 June 1998 through 6 June 1998

ER -

Dual-gate shorted-anode LIGBT with p⁺ injector eliminating the negative resistance regime

Abstract

Conference

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