Dual-Channel WS2/WSe2 Heterostructure with Tunable Graphene Electrodes

Hanul Kim; Jihoon Kim; Inayat Uddin; Nhat Anh Nguyen Phan; Dongmok Whang; Gil Ho Kim

doi:10.1021/acsaelm.2c01465

Dual-Channel WS₂/WSe₂ Heterostructure with Tunable Graphene Electrodes

Hanul Kim
, Jihoon Kim
, Inayat Uddin
, Nhat Anh Nguyen Phan
, Dongmok Whang
, Gil Ho Kim

Sungkyunkwan University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Two-dimensional semiconductor heterostructures provide significant research potential for electronic and optoelectronic applications because of their scaled thickness, pristine heterostructure interface, and ultrafast carrier transport. Herein, we report a dual-channel field-effect transistor based on n-type WS₂ and p-type WSe₂ layered heterostructure using multilayered graphene as electrodes to enable electron-dominated ambipolar electrical transport. WS₂ exhibits mobility of 20 cm² V^-1 s^-1 and an on/off ratio of 10⁵, whereas WSe₂ exhibits mobility of 5 cm² V^-1 s^-1 and an on/off ratio of 10⁴. Furthermore, our results show negative Schottky barrier heights between dual-channel heterostructure and multilayered graphene. The proposed design reduces complications in the fabrication of devices with integrated heterostructures, particularly for complementary metal-oxide semiconductor inverter applications.

Original language	English
Pages (from-to)	913-919
Number of pages	7
Journal	ACS Applied Electronic Materials
Volume	5
Issue number	2
DOIs	https://doi.org/10.1021/acsaelm.2c01465
State	Published - 28 Feb 2023

Keywords

dual channel
gate tunable
graphene electrode
WS
WSe

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10.1021/acsaelm.2c01465

Cite this

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title = "Dual-Channel WS2/WSe2 Heterostructure with Tunable Graphene Electrodes",

abstract = "Two-dimensional semiconductor heterostructures provide significant research potential for electronic and optoelectronic applications because of their scaled thickness, pristine heterostructure interface, and ultrafast carrier transport. Herein, we report a dual-channel field-effect transistor based on n-type WS2 and p-type WSe2 layered heterostructure using multilayered graphene as electrodes to enable electron-dominated ambipolar electrical transport. WS2 exhibits mobility of 20 cm2 V-1 s-1 and an on/off ratio of 105, whereas WSe2 exhibits mobility of 5 cm2 V-1 s-1 and an on/off ratio of 104. Furthermore, our results show negative Schottky barrier heights between dual-channel heterostructure and multilayered graphene. The proposed design reduces complications in the fabrication of devices with integrated heterostructures, particularly for complementary metal-oxide semiconductor inverter applications.",

keywords = "dual channel, gate tunable, graphene electrode, WS, WSe",

author = "Hanul Kim and Jihoon Kim and Inayat Uddin and Phan, \{Nhat Anh Nguyen\} and Dongmok Whang and Kim, \{Gil Ho\}",

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TY - JOUR

T1 - Dual-Channel WS2/WSe2 Heterostructure with Tunable Graphene Electrodes

AU - Kim, Hanul

AU - Kim, Jihoon

AU - Uddin, Inayat

AU - Phan, Nhat Anh Nguyen

AU - Whang, Dongmok

AU - Kim, Gil Ho

PY - 2023/2/28

Y1 - 2023/2/28

N2 - Two-dimensional semiconductor heterostructures provide significant research potential for electronic and optoelectronic applications because of their scaled thickness, pristine heterostructure interface, and ultrafast carrier transport. Herein, we report a dual-channel field-effect transistor based on n-type WS2 and p-type WSe2 layered heterostructure using multilayered graphene as electrodes to enable electron-dominated ambipolar electrical transport. WS2 exhibits mobility of 20 cm2 V-1 s-1 and an on/off ratio of 105, whereas WSe2 exhibits mobility of 5 cm2 V-1 s-1 and an on/off ratio of 104. Furthermore, our results show negative Schottky barrier heights between dual-channel heterostructure and multilayered graphene. The proposed design reduces complications in the fabrication of devices with integrated heterostructures, particularly for complementary metal-oxide semiconductor inverter applications.

AB - Two-dimensional semiconductor heterostructures provide significant research potential for electronic and optoelectronic applications because of their scaled thickness, pristine heterostructure interface, and ultrafast carrier transport. Herein, we report a dual-channel field-effect transistor based on n-type WS2 and p-type WSe2 layered heterostructure using multilayered graphene as electrodes to enable electron-dominated ambipolar electrical transport. WS2 exhibits mobility of 20 cm2 V-1 s-1 and an on/off ratio of 105, whereas WSe2 exhibits mobility of 5 cm2 V-1 s-1 and an on/off ratio of 104. Furthermore, our results show negative Schottky barrier heights between dual-channel heterostructure and multilayered graphene. The proposed design reduces complications in the fabrication of devices with integrated heterostructures, particularly for complementary metal-oxide semiconductor inverter applications.

KW - dual channel

KW - gate tunable

KW - graphene electrode

KW - WS

KW - WSe

UR - https://www.scopus.com/pages/publications/85146896687

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JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

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ER -

Dual-Channel WS₂/WSe₂ Heterostructure with Tunable Graphene Electrodes

Abstract

Keywords

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