Dry oxidation behavior of epitaxial Si0.7Ge0.3 films

H. B. Kang; J. K. Choi; J. W. Lee; C. W. Yang

Dry oxidation behavior of epitaxial Si_0.7Ge_0.3 films

H. B. Kang
, J. K. Choi
, J. W. Lee
, C. W. Yang

Department of Advanced Materials Science and Engineering

Sungkyunkwan University

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We have investigated the oxidation behavior of epi-Si_0.7Ge _0.3 films in dry oxygen ambient. Epi- Si_0.7Ge _0.3 films about 500Å in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800°C. In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO₂ (-730.4KJ/mol at 1000K) and GeO₂ (-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen, The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.

Original language	English
Pages (from-to)	361-364
Number of pages	4
Journal	Materials Science Forum
Volume	449-452
Issue number	I
State	Published - 2004
Event	Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials - Jeju Island, Korea, Republic of Duration: 5 Nov 2003 → 8 Nov 2003

Keywords

Oxidation
SiGe
TEM
XPS

Cite this

@article{d6995cca913d4360afb1b3c759d31fe9,

title = "Dry oxidation behavior of epitaxial Si0.7Ge0.3 films",

abstract = "We have investigated the oxidation behavior of epi-Si0.7Ge 0.3 films in dry oxygen ambient. Epi- Si0.7Ge 0.3 films about 500{\AA} in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800°C. In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO2 (-730.4KJ/mol at 1000K) and GeO2 (-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen, The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.",

keywords = "Oxidation, SiGe, TEM, XPS",

author = "Kang, \{H. B.\} and Choi, \{J. K.\} and Lee, \{J. W.\} and Yang, \{C. W.\}",

year = "2004",

language = "English",

volume = "449-452",

pages = "361--364",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications Ltd",

number = "I",

note = "Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials ; Conference date: 05-11-2003 Through 08-11-2003",

}

TY - JOUR

T1 - Dry oxidation behavior of epitaxial Si0.7Ge0.3 films

AU - Kang, H. B.

AU - Choi, J. K.

AU - Lee, J. W.

AU - Yang, C. W.

PY - 2004

Y1 - 2004

N2 - We have investigated the oxidation behavior of epi-Si0.7Ge 0.3 films in dry oxygen ambient. Epi- Si0.7Ge 0.3 films about 500Å in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800°C. In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO2 (-730.4KJ/mol at 1000K) and GeO2 (-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen, The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.

AB - We have investigated the oxidation behavior of epi-Si0.7Ge 0.3 films in dry oxygen ambient. Epi- Si0.7Ge 0.3 films about 500Å in thickness were deposited on (100) Si wafers by UHV-CVD system. Oxidation was carried out in a conventional tube furnace at 800°C. In this study, it was found that Ge piles up at the oxide/substrate interface, forming a Ge-rich layer. Because of the large difference in the heat of formation between SiO2 (-730.4KJ/mol at 1000K) and GeO2 (-387.07 at 1000K) [1], the Si is to be more reactive than Ge to oxygen, The oxidation rate of SiGe in a dry oxygen environment is found to be essentially the same as that of pure Si.

KW - Oxidation

KW - SiGe

KW - TEM

KW - XPS

UR - https://www.scopus.com/pages/publications/3142735950

M3 - Conference article

AN - SCOPUS:3142735950

SN - 0255-5476

VL - 449-452

SP - 361

EP - 364

JO - Materials Science Forum

JF - Materials Science Forum

IS - I

T2 - Designing, Processing and Properties of Advanced Engineering Materials: Proceedings on the 3rd International Symposium on Designing, Processing and Properties of Advanced Engineering Materials

Y2 - 5 November 2003 through 8 November 2003

ER -

Dry oxidation behavior of epitaxial Si_0.7Ge_0.3 films

Abstract

Keywords

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