Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching

J. W. Lee; H. S. Park; Y. J. Park; M. C. Yoo; T. I. Kim; H. S. Kim; G. Y. Yeom

doi:10.1557/proc-468-373

Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching

J. W. Lee, H. S. Park, Y. J. Park, M. C. Yoo, T. I. Kim, H. S. Kim, G. Y. Yeom

Samsung

Research output: Contribution to journal › Conference article › peer-review

5 Scopus citations

Abstract

Dry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH₄ and Cl₂. A highly anisotropic etching profile with a smooth surface was obtained for tilled RIBE with Cl₂ at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH₄ to the mixture of CH₄ and Cl₂ was larger than 0.83.

Original language	English
Pages (from-to)	373-377
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	468
DOIs	https://doi.org/10.1557/proc-468-373
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: 1 Apr 1997 → 4 Apr 1997

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@article{b7f6d7410f774caca454d04926dce88f,

title = "Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching",

abstract = "Dry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropic etching profile with a smooth surface was obtained for tilled RIBE with Cl2 at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Cl2 was larger than 0.83.",

author = "Lee, \{J. W.\} and Park, \{H. S.\} and Park, \{Y. J.\} and Yoo, \{M. C.\} and Kim, \{T. I.\} and Kim, \{H. S.\} and Yeom, \{G. Y.\}",

year = "1997",

doi = "10.1557/proc-468-373",

language = "English",

volume = "468",

pages = "373--377",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1997 MRS Spring Symposium ; Conference date: 01-04-1997 Through 04-04-1997",

}

TY - JOUR

T1 - Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching

AU - Lee, J. W.

AU - Park, H. S.

AU - Park, Y. J.

AU - Yoo, M. C.

AU - Kim, T. I.

AU - Kim, H. S.

AU - Yeom, G. Y.

PY - 1997

Y1 - 1997

N2 - Dry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropic etching profile with a smooth surface was obtained for tilled RIBE with Cl2 at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Cl2 was larger than 0.83.

AB - Dry etching characteristics of GaN using reactive ion beam etching (RIBE) were studied. Etching profile, etching rate and etching selectivity to a photoresist (PR) mask were investigated as a function of various etching parameters. Characteristics of chemically assisted reactive ion beam etching (CARIBE) and RIBE were compared at varied mixtures of CH4 and Cl2. A highly anisotropic etching profile with a smooth surface was obtained for tilled RIBE with Cl2 at room temperature. Etching selectivity to a PR was dramatically improved in RIBE and CARIBE when a volume fraction of CH4 to the mixture of CH4 and Cl2 was larger than 0.83.

UR - https://www.scopus.com/pages/publications/0030658516

U2 - 10.1557/proc-468-373

DO - 10.1557/proc-468-373

M3 - Conference article

AN - SCOPUS:0030658516

SN - 0272-9172

VL - 468

SP - 373

EP - 377

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 1 April 1997 through 4 April 1997

ER -

Dry etching of GaN using reactive ion beam etching and chemically assisted reactive ion beam etching

Abstract

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