Abstract
The asymmetric source-drain metal-oxide-semiconductor field-effect transistor (MOSFET) was characterized in detail in comparison with the conventional symmetric source-drain MOSFET. The principal difference between asymmetric and symmetric source-drain MOSFETs is the drain-side structure. The asymmetric source-drain MOSFET has a lightly-doped drain for a low electric field. As a result, the gate-induced drain leakage (GIDL) current is reduced, and the hot carrier reliability is improved.
| Original language | English |
|---|---|
| Pages (from-to) | 1023-1027 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 63 |
| Issue number | 5 |
| DOIs | |
| State | Published - 2013 |
Keywords
- Asymmetric source-drain MOSFET
- Band-to-band tunneling
- Drain engineering
- Gate-induced drain leakage (GIDL)