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DPIM: A 2T1C eDRAM Transformer-in-Memory Chip With Sparsity-Aware Quantization and Heterogeneous Dense-Sparse Core

  • Donghyuk Kim
  • , Jae Young Kim
  • , Hyunjun Cho
  • , Seungjae Yoo
  • , Sukjin Lee
  • , Sungwoong Yune
  • , Sejeong Yang
  • , Hoichang Jeong
  • , Keonhee Park
  • , Ki Soo Lee
  • , Jongchan Lee
  • , Chanheum Han
  • , Gunmo Koo
  • , Yuli Han
  • , Jaejin Kim
  • , Jaemin Kim
  • , Kyuho Jason Jason Lee
  • , Joo Hyung Chae
  • , Kunhee Cho
  • , Joo Young Kim
  • Korea Advanced Institute of Science and Technology
  • Ulsan National Institute of Science and Technology
  • Kwangwoon University
  • Kyungpook National University
  • Yonsei University

Research output: Contribution to journalArticlepeer-review

Abstract

Transformer models have revolutionized artificial intelligence (AI) applications across various domains, but their increasing complexity poses significant challenges in terms of computational and memory demands. While processing-inmemory (PIM) paradigms have been adopted to address these limitations, existing PIM-based transformer accelerators still face hurdles such as: 1) focusing solely on optimizing attention layers; 2) lack of sparsity exploitation for transformers; and 3) limited PIM macro capacity and low cell density, which degrades on-chip data reuse and increases external memory access (EMA). This article presents DPIM, a novel 2T1C eDRAM-based transformerin- memory chip that addresses these challenges through three key innovations: 1) a sparsity-aware quantization (SAQ) scheme that significantly increases bit-slice sparsity in both activation and weight data, achieving ratios of 83.3% and 88.4%, respectively, with minimal accuracy loss; 2) a heterogeneous PIM core capable of efficiently handling both sparse and dense matrix multiplications (MMs); and 3) a high-density 2T1C eDRAM cell with a density of 1.38 Mb/mm2, enabling large-capacity PIM macros. By integrating these features, DPIM achieves improved computational efficiency and reduced EMA with enhanced onchip data reuse. The DPIM chip, fabricated using 28-nm CMOS technology, achieves a throughput of 3.03-12.12 TOPS and an energy efficiency of 4.84-19.36 TOPS/W, all measured across INT8 and INT4 operations, respectively. It achieves a throughput density of 0.55 TOPS/mm2 with INT8 operation. With a total macro size of 4608 kb, the chip occupies a die area of 20.25 mm2 and operates at frequencies from 50 to 285 MHz with a supply voltage of 0.85-1.0 V. The DPIM successfully executes BERTLarge on the general language understanding evaluation (GLUE) dataset. Its macro density is 1413 kb/mm2, and the resulting density figure-of-merit (FoM) (macro density × throughput density) is 1:6×-115:8× higher than previous works, representing a significant advancement in hardware design for efficient transformer processing.

Original languageEnglish
Pages (from-to)2349-2364
Number of pages16
JournalIEEE Journal of Solid-State Circuits
Volume61
Issue number5
DOIs
StatePublished - 1 May 2026

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • 2T1C cell
  • heterogeneous processor
  • processing-in-memory (PIM)
  • quantization
  • transformer

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