@inproceedings{367329ddd04b405e8fb185d8247ff692,
title = "Doping of Al-catalyzed vapor-liquid-solid grown Si nanowires",
abstract = "We successfully synthesized high quality single crystal Si nanowires using Al catalyst via vapor-liquid-solid (VLS) mechanism, having diameters ranging from 10 to 200 nm with 10-20 (Jin of length. Characterization of physical and chemical properties of Al-catalyzed Si nanowires using transmission electron microscope (TEM), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS) analysis showed that single crystal Si nanowires can be grown with Al-catalyst at 540 °C and selective etching of Al existing at the tip of nanowire can provide metal-free Si nanowires that are compatible with conventional Si-based IC process. By using plasma doping method, it was confirmed that the doping level can be controlled and the boron was successfully introduced on Si substrate with 3x1022/cm3 of peak doping concentration.",
author = "Whang, \{Sung Jin\} and Lee, \{Sung Joo\} and Yang, \{Wei Feng\} and Zhu, \{Hai Chen\} and Gu, \{Han Lu\} and Cho, \{Byung Jin\} and Liew, \{Yun Fook\}",
year = "2007",
language = "English",
isbn = "9781605604251",
series = "Materials Research Society Symposium Proceedings",
pages = "66--71",
booktitle = "Materials Research Society Symposium Proceedings - Applications of Nanotubes and Nanowires",
note = "Applications of Nanotubes and Nanowires - 2007 MRS Spring Meeting ; Conference date: 09-04-2007 Through 13-04-2007",
}